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Effect of air annealing on the optical electrical and structural properties of In2S3 films

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Abstract

The effect of the annealing temperature T a on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350°C substrate temperature was studied. All the In2S3 films annealed in the range from 100 to 400°C are polycrystalline with (220) preferential orientation. The resistivity decreases as T a increases until it reaches a value of 25 Ohm-cm for T a=400°C. The grain size also increases when T a increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.

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Authors and Affiliations

  1. Engineering Faculty Department of Engineering Physics, Gaziantep University, 27310, Gaziantep, Turkey

    Metin Bedir & Mustafa Öztas

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  1. Metin Bedir
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  2. Mustafa Öztas
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Correspondence to Metin Bedir.

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Bedir, M., Öztas, M. Effect of air annealing on the optical electrical and structural properties of In2S3 films. Sci. China Ser. E-Technol. Sci. 51, 487–493 (2008). https://doi.org/10.1007/s11431-008-0074-0

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  • DOI: https://doi.org/10.1007/s11431-008-0074-0

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