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Study on H atoms diffusion and adsorption properties of MgH2-V systems

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Abstract

Based on experimental results that VH0.81/MgH2 interface was found during the process of mechanically milling MgH2+5at.%V nanocomposite, H atoms diffusion and adsorption properties of MgH2-V systems have been investigated by using a first-principles plane-wave pseudopotential method based on the density functional theory. The results are as follows. When VH/MgH2 interface is formed due to V alloying MgH2 phase, the vacancy formed by H atoms near VH phase region is more stable than that without V alloying, while vacancy near MgH2 phase region is less stable than that without V alloying. During the process of H atoms diffusion after V alloying, the max migration barrier energy of H atoms in MgH2-V systems is reduced compared with that of MgH2 phase, which means that H atoms diffuse easily. When H diffuses into VH from MgH2 across VH/MgH2 interface, among three substitutions such as the replacement of H for V vacancy, or interstitial site or V atoms, the replacement of H for V vacancy has the strongest diffusion ability, next interstitial site, and finally V atoms site. As far as H adsorbed on different surfaces of VH phase is concerned, physical adsorption is carried out more easily than chemical adsorption, and the behavior of H atoms adsorbed on the surface near VH phase region can be found more easily than that near MgH2 phase region.

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Correspondence to DianWu Zhou.

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Supported by the Ministry of Science and Technology of China (Grant No. 2006CB605104) and the National Natural Science Foundation of China (Grant No. 50771044)

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Zhou, D., Liu, J. & Peng, P. Study on H atoms diffusion and adsorption properties of MgH2-V systems. Sci. China Ser. E-Technol. Sci. 51, 979–988 (2008). https://doi.org/10.1007/s11431-008-0069-x

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  • DOI: https://doi.org/10.1007/s11431-008-0069-x

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