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Preparation and electronic characteristics of anionic perylene bisimide films

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Abstract

Neutral perylene bisimides (PBI) are well-known n-type organic semiconductors, with number of challenging electronic properties in their neutral and reduced states. We report the characteristic electronic properties of PBI anionic films. We unexpectedly discovered that pristine PBI dianion film showed p-type character, while oxidized dianion film (dominant neutral state with few radical anions) showed normal n-type semiconductor character based on Seebeck effect measurements. Both kinds of films exhibit high electrical conductivity with a potential for thermoelectric applications. The mechanism of polarity reversal is proposed.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (51573055, 51373054, 21334002, 51403063), National Basic Research Program of China (2014CB643504), Fundamental Research Funds for the Central Universities, China Postdoctoral Science Fund (2014M562174), and Introduced Innovative Research & Development Team of Guangdong (201101C0105067115).

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Authors and Affiliations

  1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, China

    Wenqiang Zhang

  2. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China

    Wenqiang Zhang, Qinglin Jiang, Jiadong Zhou, Dehua Hu, Xuehong Zhou, Weitao Ma, Muddasir Hanif, Zengqi Xie, Linlin Liu & Yuguang Ma

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  1. Wenqiang Zhang
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  2. Qinglin Jiang
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  3. Jiadong Zhou
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  4. Dehua Hu
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  9. Linlin Liu
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  10. Yuguang Ma
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Correspondence to Dehua Hu, Zengqi Xie or Yuguang Ma.

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Zhang, W., Jiang, Q., Zhou, J. et al. Preparation and electronic characteristics of anionic perylene bisimide films. Sci. China Chem. 60, 1334–1339 (2017). https://doi.org/10.1007/s11426-017-9098-6

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