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Fast growth of graphene on SiO2/Si substrates by atmospheric pressure chemical vapor deposition with floating metal catalysts

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  • SPECIAL TOPIC · Molecular Functional Materials and Applications
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Abstract

Graphene on dielectric substrates is essential for its electronic applications. Graphene is typically synthesized on the surface of metal and then transferred to an appropriate substrate for fabricating device applications. This post growth transfer process is detrimental to the quality and performance of the as-grown graphene. Therefore, direct growth of graphene films on dielectric substrates without any transfer process is highly desirable. However, fast growth of graphene on dielectric substrates remains challenging. Here, we demonstrate a transfer-free chemical vapor deposition (CVD) method to directly grow graphene films on dielectric substrates at fast growth rate using Cu as floating catalyst. A large area (centimeter level) graphene can be grown within 15 min using this CVD method, which is increased by 500 times compared to other direct CVD growth on dielectric substrate in the literatures. This research presents a significant progress in transfer-free growth of graphene and graphene device applications.

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Authors and Affiliations

  1. School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin, 150001, China

    Na Liu & PingAn Hu

  2. Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin, 150080, China

    Na Liu, Jia Zhang, Yunfeng Qiu, Jie Yang & PingAn Hu

  3. Harbin Institute of Technology, Harbin, 150080, China

    Na Liu, Jia Zhang, Yunfeng Qiu, Jie Yang & PingAn Hu

Authors
  1. Na Liu
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  2. Jia Zhang
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  3. Yunfeng Qiu
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  4. Jie Yang
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  5. PingAn Hu
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Correspondence to PingAn Hu.

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Liu, N., Zhang, J., Qiu, Y. et al. Fast growth of graphene on SiO2/Si substrates by atmospheric pressure chemical vapor deposition with floating metal catalysts. Sci. China Chem. 59, 707–712 (2016). https://doi.org/10.1007/s11426-015-0536-8

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  • DOI: https://doi.org/10.1007/s11426-015-0536-8

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