Abstract
Transparent, smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution, zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol. The ZTO films have been prepared by spin-coating, followed by thermal treatment in oxygen atmosphere. The morphology, composition, crystallinity and band gap energy (Eg) of the ZTO thin films have been characterized by Atomic Force Microscopy (AFM), Atomic Emission Spectrometry (AES), X-ray Diffraction (XRD) and UV-vis spectrophotometry. The conductivity of ZTO is about 9.8 × 10−9 S/cm, as estimated from the current-voltage (I-V) curve. The effect of the thermal treatment process on the morphology of ZTO thin films is also discussed.
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Norris BJ, Anderson J, Wager JF, Keszler DA. Spin-coated zinc oxide transparent transistors. J Phys D: Appl Phys, 2003, 36: L105–L107
Ong BS, Li CS, Li YN, Wu YL, Loutfy R. Stable, solution-processed, high-mobility ZnO thin-film transistors. J Am Chem Soc, 2007, 129: 2750–2751
Lee DH, Chang YJ, Herman GS, Chang CH. A general route to printable high-mobility transparent amorphous oxide semiconductors. Adv Mater, 2007, 19: 843–847
Pal BN, Trottman P, Sun J, Katz H. Solution-deposited zinc oxide and zinc oxide/pentacene bilayer transistors: High mobility n-channel, ambipolar, and nonvolatile devices. Adv Funct Mater, 2008, 18: 1832–1839
Lee DH, Chang YJ, Stickle W, Chang CH. Functional porous tin oxide thin films fabricated by inkjet printing process. Eletrochem Solid St, 2007, 10: K51–K54
Schneider JJ, Hoffmann RC, Engstler J, Soffke O, Jaegermann W, Issanin A, Klyszcz A. A printed and flexible field-effect transistor device with nanoscale zinc oxide as active semiconductor material. Adv Mater, 2008, 20: 3383–3387
Jeong Y, Bae C, Lim D, Song K, Woo K, Shin H, Cao GZ, Moon J. Bias-Stress-Stable solution-processed oxide thin film transistors. Acs Appl Mater Interf, 2010, 2 (3): 611–615
You JB, Zhang XW, Fan YM, Yin ZG, Cai PF, Chen NF. Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering. Appl Surf Sci, 2009, 255, 5876–5880
Ko HJ, Chen YF, Zhu Z, Yao T, Kobayashi I, Uchiki H. Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy. Appl Phys Lett, 2000, 76: 1905–1907
Wagner MR, Bartel TP, Kirste R, Hoffmann Axel. Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition. Phys Rev B, 2009, 79: 035307
Shin PK, Aya Y, Ikegami T, Ebihara K. Application of pulsed laser deposited zinc oxide films to thin film transistor device. Thin Solid Films, 2008, 516: 3767–3771
Bhuiyan MS, Paranthaman M, Salama K. Solution-derived textured oxide thin films — a review. Supercond Sci Technol, 2006, 19: R1–R21
Chiang HQ, Wager JF, Hoffman RL, Jeong J, Keszler DA. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl Phys Lett, 2005, 86: 013503
Song K, Kim D, Li XS, Jun T, Jeong YM, Moon J. Solution processed invisible all-oxide thin film transistors. J Mater Chem, 2009, 19: 8881–8886
Kim DL, Kim HJ. Review on optical and electrical properties of oxide semiconductors. Proceed SPIE-The Intern Soc Optical Eng, 2010, 7603: 760313
Harvey SP, Poeppelmeier KR, Mason TO. Subsolidus phase relationships in the ZnO-In2O3-SnO2 system. J Am Ceram Soc, 2008, 91: 3683–3689
Zeng J, Xin MD, Li KW, Wang H, Yan H, Zhang WJ. Transformation process and photocatalytic activities of hydrothermally synthesized Zn2SnO4 nanocrystals. J Phys Chem C, 2008, 112: 4159–4167
Choudhury KR, Yoon JH, So F. LiF as an n-dopant in tris (8-hydroxyquinoline) aluminum thin films. Adv Mater, 2008, 20: 1456
Wang XY, Dong GF, Qiao J, Duan L, Wang LD, Qiu Y. Preparation and properties of zinc oxide films by spin-coating water solution precursor. Acta Phys -Chim Sin, 2010, 26: 2049–2052
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Zhao, Y., Duan, L., Qiao, J. et al. Preparation and properties of solution-processed zinc tin oxide films from a new organic precursor. Sci. China Chem. 54, 651–655 (2011). https://doi.org/10.1007/s11426-011-4239-5
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DOI: https://doi.org/10.1007/s11426-011-4239-5