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Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile

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Abstract

The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm (i.e., uniformly in space). This improves the spatial square norm limit by Wang, Xin and Markowich.

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Author information

Authors and Affiliations

  1. Academy of Mathematics and Systems Science, Chinese Acadamy of Sciences, Beijing, 100080, China

    Ling Hsiao

  2. Institute of Applied Physics and Computational Mathematics, Beijing, 100088, China

    QiangChang Ju

  3. College of Science, Beijing University of Technology, Beijing, 100022, China

    Shu Wang

Authors
  1. Ling Hsiao
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  2. QiangChang Ju
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  3. Shu Wang
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Corresponding author

Correspondence to Ling Hsiao.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 10431060, 10701011, 10771009) and Beijing Science Foundation of China (Grant No. 1082001)

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Hsiao, L., Ju, Q. & Wang, S. Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile. Sci. China Ser. A-Math. 51, 1619–1630 (2008). https://doi.org/10.1007/s11425-008-0039-6

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  • DOI: https://doi.org/10.1007/s11425-008-0039-6

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