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Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications

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Abstract

This work presents, the modeling of small signal parameters for Gallium Nitride (GaN) based Buffered Trench Gate (BTG) MOSFET for wireless applications. To improve the device’s performance, hafnium dioxide (HfO2) and silicon dioxide (SiO2) are stacked and placed in the trenched region and simultaneously compared with BTG-MOSFET and its conventional counterpart. The small signal modeling has been performed in terms of Y-parameters (admittance parameters) and S-parameters (scattering parameters) for all three devices and also compared the results. The main aim for selecting small signal parameters is to analyze the behavior of the device for wireless applications at microwave frequencies. Small signal modeling on the proposed device shows the improved results as compared to its conventional counterparts. Thus, results validate the suitable candidature of GaN-BTG MOSFET for high performance wireless application at microwave frequencies.

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Acknowledgements

The authors are thankful to JIIT for the necessary facilities to conduct this research work.

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Authors and Affiliations

  1. Electrical Engineering Department, Delhi Technological University, Delhi, India

    M. M. Tripathi & Ajay Kumar

  2. ECE Department, Jaypee Institute of Information Technology, Noida, India

    Ajay Kumar

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  1. M. M. Tripathi
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  2. Ajay Kumar
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AK contributed to methodology, conceptualization, and writing—original draft preparation; MMT and AK were involved in writing—review and editing.

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Correspondence to Ajay Kumar.

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Tripathi, M.M., Kumar, A. Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications. Wireless Pers Commun 132, 2243–2253 (2023). https://doi.org/10.1007/s11277-023-10720-w

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