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1T-DRAM Cell with Different FET Technologies for Low Power Application

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Abstract

DRAM’s are essential for memory-based electronics devices and the usage of RAM is increasing day by day to reach the user's expectation the products are get designed based on low power and portable. The proposed DRAM cell has a separate read and write path for improvement in read and write abilities. Power dissipation is a major issue to solve this issue researchers are focusing on low power circuits and trying to design the circuits with less number of the transistor so that it will consume less amount of power. In this paper, three structures are presently based on MOSFET technology and CNTFET technology. MOSFET model structures are divided into two they are 1.DRAM circuit with Tri-state buffers and 2. DRAM circuit without Tri-state buffers. CNTFET based structure is built with the help of Carbon Nanotube-FET’s and the structure is the same as DRAM without Tri-state buffers. Power analysis, voltage, delay are evaluated with the help of cadence virtuoso and LT spice Tools. The proposed DRAM cell exhibits higher write and reads margins with an improvement compared to conventional cell.

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Data Availability

All simulation results are available in cadence virtuoso Lab of VLSI Domain under School of Electronics and Electrical Engineering, lovely Professional University, Punjab, India.

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Acknowledgments

This work is supported by DST-SERB, CRG grant, Govt. of India, CRG/2020/006229, dated: 05/04/2021.

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Authors and Affiliations

  1. School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India

    Durgesh Addala, Sanjeet Kumar Sinha, Mohan Chandu Gadiparthi & Sweta Chander

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  1. Durgesh Addala
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  2. Sanjeet Kumar Sinha
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  3. Mohan Chandu Gadiparthi
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  4. Sweta Chander
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Correspondence to Sanjeet Kumar Sinha.

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Addala, D., Sinha, S.K., Gadiparthi, M.C. et al. 1T-DRAM Cell with Different FET Technologies for Low Power Application. Wireless Pers Commun 128, 471–486 (2023). https://doi.org/10.1007/s11277-022-09963-w

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