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A 110–140 GHz Millimeter-Wave VCO Using Varactor and Bulk Effective Technique in 65 nm CMOS Process

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Abstract

In this paper, an enhanced voltage controlled oscillator (VCO) at center frequency 125 GHz with tuning rang of 24% is presented. The proposed idea is based on the tuning capacitance using MOS varactor. The structure is consisted of applying an MOS varactor capacitor to the drain and bulk (in parallel) of NMOS transistor in 65 nm CMOS standard technology. The obtained output of the proposed VCO at 2nd harmonic is tunable at 110–140 GHz frequency with applying ± 1.2 input tuning voltage. Simulation results of the proposed circuit are obtained after extracting post layout (with total chip size of 0.07 mm2) and confirm theoretical results. Compared to the resent designs, the obtained results indicate that the proposed circuit has high tuning range, low die area and a good figure of merit @ 1.2 power supply voltage.

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Acknowledgement

The authors would like to thank all people involved in this research work for their kind and responsible assistance special to Dr. Mahdi Mottaghi-Kashtiban.

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Authors and Affiliations

  1. Department of Electrical Electronics Engineering, Rasht Branch, Islamic Azad University, 4147654919, Rasht, Iran

    Shilan Neda & Abdollah Eskandarian

  2. Department of Electrical Electronics Engineering, Mahabad Branch, Islamic Azad University, 5913933137, Mahabad, Iran

    Ghader Yosefi

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  1. Shilan Neda
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  2. Ghader Yosefi
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  3. Abdollah Eskandarian
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Correspondence to Ghader Yosefi.

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Neda, S., Yosefi, G. & Eskandarian, A. A 110–140 GHz Millimeter-Wave VCO Using Varactor and Bulk Effective Technique in 65 nm CMOS Process. Wireless Pers Commun 114, 3367–3382 (2020). https://doi.org/10.1007/s11277-020-07536-3

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