Abstract
This paper presents a novel design for a double-edge triggered flip-flop (DETFF). A detailed analysis of the transistors used in the DETFF is carried out to determine the critical path. Therefore, the proposed DETFF employs low-V th transistors at critical paths such that the power-delay product as well as the large area consumption caused by the low-V th transistors can be resolved simultaneously. Therefore, the proposed DETFF fully utilizes the multi-V th scheme provided by advanced CMOS processes without suffering from a large area penalty, slow clock frequency, and poor noise immunity. The proposed design is implemented using a typical 0.18-μm 1P6M CMOS process. The measurement results reveal that the proposed DETFF reduce the power-delay product by at lease 25% (i.e., dissipated energy).
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Acknowledgements
This research was partially supported by the National Science Council under grant NSC97-2220-E-110-009, the Ministry of Economic Affairs under grant 98-EC-17-A-02-S2-0017, 98-EC-17-A-07-S2-0010, and 98-EC-17-A-01-S1-0104 and the National Health Research Institutes under grant NHRI-EX98-9732EI. The authors would like to thank CIC of NSC for their chip fabrication service.
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Chua-Chin Wang, Senior Member, IEEE.
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Wang, CC., Sung, GN., Chang, MK. et al. Energy-Efficient Double-Edge Triggered Flip-Flop. J Sign Process Syst 61, 347–352 (2010). https://doi.org/10.1007/s11265-010-0457-x
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DOI: https://doi.org/10.1007/s11265-010-0457-x