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Phononic Friction in Monolayer/Bilayer Graphene

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Abstract

Herein, frictional phonon dissipation in monolayer/bilayer graphene was modeled using phonon spectra based on molecular dynamics simulations. The results indicate that the number of excited acoustic phonon modes is the primary reason for increased friction. Specifically, the frequencies of flexural acoustic modes shifted to high levels as thickness increased during the sliding process, resulting in increased friction. The increase in friction with sliding velocity is caused by an increase in the number of in-plane acoustic modes. Higher normal loads can increase both the in-plane and flexural acoustic modes, leading to increased friction. Our observations further suggest that the variation in temperature at the friction interface results from the competition between frictional energy and thermal conductivity. Both high normal loads and thick layers increase the thermal conductivity, ultimately improving the friction dissipation efficiency. Hence, it can be concluded that the increase in thermal conductivity is the reason for the counterintuitive decrease in the interfacial temperature resulting from high friction.

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Acknowledgements

We are grateful for the support provided by the National Natural Science Foundation of China (52065037, 51665030, and 52065036), Chinese Postdoctoral Science Foundation (2021MD703810), Postdoctoral Science Foundation of Gansu Academy of Sciences (BSH202101), Doctoral Foundation of Lanzhou University of Technology (062101), and Educational Unveiling Leadership Project of Gansu Province of China (2021jyjbgs01).

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  1. School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou, 730050, China

    Yun Dong, Weibin Hui, Fangming Lian, Yusong Ding & Zhiyuan Rui

  2. Institute of Nanomaterials Application Technology, Gansu Academy of Sciences, Lanzhou, 730000, China

    Yun Dong

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Dong, Y., Hui, W., Lian, F. et al. Phononic Friction in Monolayer/Bilayer Graphene. Tribol Lett 70, 72 (2022). https://doi.org/10.1007/s11249-022-01612-4

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