Abstract
In this paper, three complexes La2(thd)6 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, 1), La2(tmod)6 (tmod = 2,2,6,6-tetramethyl octane-3, 5-dionates, 2) and La2(ibpm)6 (ibpm = 2,2,6-trimethyl-3, 5-heptane-dionates, 3) were synthesized by one-step method and characterized with 1H-NMR, 13C-NMR and X-ray single-crystal diffraction. The melting point and TGA data demonstrated that the asymmetry of the ligand and the number of flexible joints could improve the volatility of the complex. With the help of asymmetry and flexible joint, La2(tmod)6 was selected as ALD precursor to deposit La2O3 film on SiO2/Si (100) wafer. The self-limited deposition results demonstrated that La2(tmod)6 is better precursor than reported La2(thd)6 and La(thd)3-DMEA (DMEA = N,N-dimethylethylenediamine).
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References
He W, Schuetz S, Solanki R, Belot J, Mcandrew J (2004) Atomic layer deposition of lanthanum oxide films for high-κ gate dielectrics. Electrochem Solid St 7:G131–G133
Triyoso DH, Hegde RI, Grant J, Fejes P, Tobin PJ (2004) Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments. J Vac Sci Technol B 22:2121–2127
Viral B, Khushabu A, Vilas P, Sumit P, Ashok M (2018) Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system. Int J Mod Phys B 32:1840074-1–1840074-5
Joo T, Jeong P, Kim H, Hyuck J, Choong-Ki J, Kwang L, Na D, Young S, Hyung-Suk L, Miyoung J, Seungwu K, Cheol H, Hwang S (2010) Reduction of electrical defects in atomic layer deposited HfO2 films by Al doping. Chem Mater 22:4175–4184
Park TJ, Byun YC, Wallace RM, Kim J (2017) Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films. J Chem Phys 146:052821-1–052821-5
Wu YH, Yang MY, Chin A, Chen WJ, Kwei CM (2000) Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 Å. Ieee Electr Device L 21:341–343
Saha S, Phakatkar AH, Jursich G, Shokuhfar T, Takoudis CG (2023) The interface of atomic layer deposited ZrO2 on Si/SiO2 from an alkoxide zirconium precursor and ethanol: a transmission electron microscopy-focused study. Surf Interface Anal 55:638–643
Cooper R, Upadhyaya HP, Minton TK, Berman MR, Du X (2008) Protection of polymer from atomic-oxygen erosion using Al2O3 atomic layer deposition coatings. Thin Solid Films 516:4036–4039
Dang VS, Parala H, Kim JH, Xu K, Srinivasan NB, Edengeiser E, Havenith M, Wieck AD, Arcos T, Fischer RA, Devi A (2014) Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition. Phys Status Solidi A 211:416–424
Kukli K, Ritala M, Matero R, Leskelae M (2000) Influence of atomic layer deposition parameters on the phase content of Ta2O5 films. J Cryst Growth 212:459–468
Sawka A, Kwatera A (2022) Low temperature synthesis of Y2O3-doped CeO2 layers using MOCVD. Mater Sci Eng B 276:115580–115587
Lee JS, Kim WH, Oh IK, Kim MK, Lee G, Lee CW, Park J, Lansalot-Matras C, Noh W, Kim H (2014) Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric. Appl Surf Sci 297:16–21
Lin YH, Lin KY, Hsueh WJ, Young LB, Chang TW, Chyi JI, Pi TW, Kwo J, Hong M (2017) Interfacial characteristics of Y2O3/GaSb (001) grown by molecular beam epitaxy and atomic layer deposition. J Crys Growth 477:164–168
Capodieci V, Wiest F, Sulima T, Schulze J, Eisele I (2005) Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technology. Microelectron Reliab 45:937–940
Khairnar AG, Mahajan AM (2013) Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology. Solid State Sci 15:24–28
Liu C, Chor EF, Tan LS (2007) Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide. Semicond Sci Tech 22:522–527
Chang CY, Endo K, Kato K, Takenaka M, Takagi S (2017) Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics. Aip Adv 7:095215-1–095215-8
Ehsani M, Hamidon MN, Toudeshki A, Shahrokh Abadi MH, Rezaeian S (2016) CO2 gas sensing properties of screen-printed La2O3/SnO2 thick film. Ieee Sens J 16:6839–6845
Yadav AA, Kumbhar VS, Patil SJ, Chodankar NR, Lokhande CD (2016) Supercapacitive properties of chemically deposited La2O3 thinfilm. Ceram Int 42:2079–2084
Ahn S, Littlewood P, Liu Y (2022) Stabilizing supported Ni catalysts for dry reforming of methane by combined La doping and Al overcoating using atomic layer deposition. Acs Catal 22:10522–10530
Sawka A (2020) Metal-organic chemical vapour deposition of lanthana-doped ceria layers at low temperatures. Ceram Int 47:5198–5208
Patil SR, Barhate VN, Patil VS, Agrawal KS, Mahajan AM (2022) The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors. J Mater Sci-Mater El 33:11227–11235
Cao D, Cheng X, Jia T, Xu D, Wang Z, Xia C, Yu Y, Shen DS (2013) Characterization of HfO2/La2O3 layered stacking deposited on Si substrate. J Vac Sci Technol B 31:01A113-01A113-5
Popovici MI, Walke AM, Bizindavyi J, Meersschaut J, Banerjee K, Potoms G, Katcko K, Van den Bosch G, Delhougne R, Kar GS, Van Houdt J (2022) High-endurance ferroelectric (La, Y) and (La, Gd) Co-doped hafnium zirconate grown by atomic layer deposition. Acs Appl Electron Ma 4:1823–1831
Seppälä S, Niinistö J, Mattinen M, Mizohata K, Räisänen J, Noh W, Ritala M, Leskelä M (2018) Atomic layer deposition of lanthanum oxide with heteroleptic cyclopentadienyl-amidinate lanthanum precursor: effect of the oxygen source on the film growth and properties. Thin Solid Films 660:199–206
Jaggernauth A, Mendes JC, Silva RF (2020) Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review. J Mater Chem C 8:13127–13153
Zhang Y, Du L, Liu X, Ding Y (2019) A high growth rate atomic layer deposition process for nickel oxide film preparation using a combination of nickel (II) diketonate-diamine and ozone. Appl Surf Sci 481:138–143
Zhang Y, Du L, Liu X, Ding Y (2019) High growth per cycle thermal atomic layer deposition of Ni films using an electron-rich precursor. Nanoscale 11:3484–3488
Triyoso DH, Hegde RI, Grant JM, Schaeffer JK, Roan D, White BE, Tobin PJ (2005) Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition. J Vac Sci Technol B 23:288–297
Kukli K, Ritala M, Pore V, Leskela Sajavaara MT, Hegde R, Gilmer D, Tobin P, Jones A, Aspinall H (2006) Atomic layer deposition and properties of lanthanum oxide and lanthanum–aluminum oxide films. Chem Vapor Depos 12:158–164
Päiväsaari J, Putkonen M, Niinistö L (2005) A comparative study on lanthanide oxide thin films grown by atomic layer deposition. Thin Solid Films 472:275–281
Niinistö J, Petrova N, Putkonen M, Niinistö L, Arstila K, Sajavaara T (2005) Gadolinium oxide thin films by atomic layer deposition. J Cryst Growth 285:191–200
Päiväsaari J, Putkonen M, Sajavaara T, Niinistö L (2004) Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors. J Alloy Compd 374:124–128
Nieminen M, Putkonen M, Niinistö L (2001) Formation and stability of lanthanum oxide thin films deposited from β-diketonate precursor. Appl Surf Sci 174:155–166
Scarel G, Debernardi A, Tsoutsou D, Spiga S, Capelli SC, Lamagna L, Volkos SN, Alia M, Fanciulli M (2007) Vibrational and electrical properties of hexagonal La2O3 films. Appl Phys Lett 91:192901-1–102901
Kim WH, Maeng WJ, Moon KJ, Myoung JM, Kim H (2010) Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition. Thin Solid Films 519:362–366
Kwon J, Dai M, Halls MD, Langereis E, Chabal YJ, Gordon RG (2009) In situ infrared characterization during atomic layer deposition of lanthanum oxide. J Phys Chem C 113:654–660
Chen PY, Hadamek T, Kwon S, Al-Quaiti F, Ekerdt JG (2020) Role of template layers for heteroepitaxial growth of lanthanum oxide on GaN(0001) via atomic layer deposition. J Vac Sci Technol A 38:012403-1–012403-8
Park IS, Jung YC, Seong S, Ahn J, Kang J, Noh W, Lansalot-Matras C (2014) Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor. J Phys Chem C 2:9240–9247
Zhao B, Mattelaer F, Rampelberg G, Dendooven J, Detavernier C (2019) Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettability. Acs Appl Mater Inter 12:3179–3187
Oh IK, Kim K, Lee Z, Ko KY, Lee CW, Lee SJ, Myung JM, Lansalot-Matras C, Noh W, Dussarrat C, Kim H, Lee HBR (2015) Hydrophobicity of rare earth oxides grown by atomic layer deposition. Chem Mater 27(1):148–156
Seppala S, Niinisto J, Blanquart T, Kaipio M, Mizohata K, Raisanen J, Lansalot-Matras C, Noh W, Ritala M, Leskelä M (2016) Heteroleptic cyclopentadienyl-amidinate precursors for atomic layer deposition (ALD) of Y, Pr, Gd, and Dy oxide thin films. Chem Mater 28:5440–5449
Park NK, Kang DK, Kim B, Jin S, Ha JS (2006) Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition: sciencedirect. Appl Surf Sci 252:8506–8509
Bedoya C, Condorelli GG, Finocchiaro ST, Di Mauro A, Atanasio D (2006) MOCVD of lanthanum oxides from La(tmhd)3 and La(tmod)3 precursors: a thermal and kinetic investigation. Chem Vapor Depos 12:46–53
Onn TM, Monai M, Dai S, Emiliano F, Tiziano M, Pan X, George WG, Paolo F, Raymond JG (2018) Smart Pd catalyst with improved thermal stability supported on high-surface-area LaFeO3 prepared by atomic layer deposition. J Am Chem Soc 140:4841–4848
Mao X, Alexandre CF, Eric AS, Raymond JG (2020) Changes in Ni–NiO equilibrium due to LaFeO3 and the effect on dry reforming of CH4: ScienceDirect. J Catal 381:561–569
Ahn S, Littlewood P, Liu Y (2022) Stabilizing supported Ni catalysts for dry reforming of methane by combined La doping and Al overcoating using atomic layer deposition. Acs Catal 12:10522–10530
Seim H, Mölsä H, Nieminen M, Fjellvåg H, Niinistö L (1997) Deposition of LaNiO3 thin films in an atomic layer epitaxy reactor. J Mater Chem 7:449–454
Haukka S, Suntola T (1997) Advanced materials processing by adsorption control. Interface Sci 5:119–128
Zhao W, Jiang J, Luo Y, Li J, Ding Y (2023) Atomic layer deposition of La2O3 film with precursor La (thd)3-DMEA. Coatings 13:870
Li Z, Seán TB, Gordon RG (2005) Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal. Inorg Chem 44:1728–1735
Li Z, Lee DK, Coulter M, Leonard N, Rodriguez J, Gordon RG (2008) Synthesis and characterization of volatile liquid cobalt amidinates. Dalton Trans. https://doi.org/10.1039/B800712H
Sheldrick GM (1997) SHELXS-97 Program for crystal structure solution. University of Göttingen Germany
Gordon RG, Broomhall-Dillard RNR, Teff DJ (2000) Synthesis and solution decomposition kinetics of flash-vaporizable liquid barium beta-diketonates. Adv Funct Mater 10:201–211
Pike Ryan AS, Sapkota RR, Shrestha BD, Roshan K, Shekhar K, Dickie C, Diane A, Giri R (2020) K2CO3-catalyzed synthesis of 2, 5-dialkyl-4, 6, 7-tricyano-decorated indoles via carbon–carbon bond cleavage. Org Lett 22:3268–3272
Nikolaeva A, Nygaard R, Martynova I, Tsymbarenko D (2020) Synthesis, structure and thermal behavior of volatile mononuclear mixed ligand complexes of rare-earth dipivaloylmethanates with diethylentriamine. Polyhedron 180:114373–114382
Wright SF, Dollimore D, Dunn JG, Alexander K (2004) Determination of the vapor pressure curves of adipic acid and triethanolamine using thermogravimetric analysis. Thermochim Acta 421:25–30
Van den Oetelaar LCA, Partridge A, Toussaint SLG, Flipse CFJ, Brongersma HH (1998) A surface science study of model catalysts. 2. Metal-support interactions in Cu/SiO2 model catalysts. J Phys Chem B 102:9541–9549
Yuikhan L, Mosyagina SA, Stabnikov PA, Alferova NI, Korolkov IV, Pervukhina NV, Morozova NB (2017) Structure of lanthanum (III) tris-dipivaloylmethanate. J Struct Chem 58:843–846
Stabnikov PA, Pervukhina NV, Kuratieva NV, Kryuchkova NA, Korolkov IV, Sysoev SV, Babailov SP (2021) New polymorphic modification of Y, Ho, Tm and Lu tris-2,2,6,6-tetramethyl-heptane-2, 4-dionates: structure, volatility and luminescence. Polyhedron 198:115077
Richardson MF, Sievers RE (1971) Volatile rare earth chelates of 1,1,1,5,5,5-hexafluoro-2, 4-pentanedione and 1,1,1,2,2,3,3,7,7,7-decafluoro-4, 6-heptanedione. Inorg Chem 10:498–504
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Zhao, W., Zhou, H., Li, J. et al. The syntheses, characterization, thermal properties of asymmetrical La β-diketonate and their application as ALD precursor for La2O3 films. Transit Met Chem (2024). https://doi.org/10.1007/s11243-024-00583-w
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DOI: https://doi.org/10.1007/s11243-024-00583-w