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Dye sensitization of a large band gap semiconductor by an iron(III) complex

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Abstract

The Fe(III) complex, [FeIII(HQS)3] (HQS = 8-hydroxyquinoline-5-sulfonic acid), is found to effect sensitization of the large band gap semiconductor, TiO2. The role of interfacial electron transfer in sensitization of TiO2 nanoparticles by surface adsorbed [FeIII(HQS)3] was studied using femtosecond time scale transient absorption spectroscopy. Electron injection has been confirmed by direct detection of the electron in the conduction band. A TiO2-based dye-sensitized solar cell (DSSC) was fabricated using [FeIII(HQS)3] as a sensitizer, and the resulting DSSC exhibited an open-circuit voltage value of 425 mV. The value of the short-circuit photocurrent was found to be 2.5 mA/cm2. The solar to electric power conversion efficiency of the [FeIII(HQS)3] sensitized TiO2-based DSSC device was 0.75 %. The results are discussed in the context of sensitization of TiO2 by other Fe(II)-dye complexes.

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Acknowledgments

The authors (DC and LG) gratefully acknowledge financial support from the MNRE (Project No. GAP 201412), Govt. of India, New Delhi. DC is also thankful to Prof. Dipak Palit of BARC, Mumbai for performing femtosecond transient absorption spectral studies.

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Correspondence to Debabrata Chatterjee.

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Chatterjee, D., Moulik, S.K., Giribabu, L. et al. Dye sensitization of a large band gap semiconductor by an iron(III) complex. Transition Met Chem 39, 641–646 (2014). https://doi.org/10.1007/s11243-014-9843-8

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  • DOI: https://doi.org/10.1007/s11243-014-9843-8

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