The relationship between the resistivity, the photoconductivity and the short-wave infrared (SWIR) transmission of HR GaAs:Cr wafers and the properties of various-diameter n-GaAs wafers made of LEC and VGF n-GaAs crystals is addressed. It is established that the macroscopic inhomogeneity of resistivity and photoconductivity in HR GaAs:Cr wafers is mostly determined by the uneven macroscopic lateral distribution of the shallow donor impurity in n-GaAs wafers. By means of SWIR transmission imaging, it is shown that the microscopic inhomogeneity in HR GaAs:Cr wafers is primarily determined by the n-GaAs crystal growth technology. The wafers exhibited a (100) orientation. It is demonstrated that a contactless steady state conductivity mapping technique can be applied for express evaluation of electron mobility-lifetime product (μe×τe) in HR GaAs:Cr wafers. It is shown that the macroscopic inhomogeneities of resistivity in the 76 mm and 100-diameter LEC HR GaAs:Cr (LEC – Liquid Encapsulated Czochralski) wafers are determined by the macroscopic inhomogeneity of the charge carrier concentration (CC) profiles in LEC n-GaAs wafers.
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References
S. K. Kurinec and S. Walia, Energy Efficient Computing & Electronics: Devices to Systems, CRC Press (2020).
U. Kruchonak, S. A. El-Azm, K. Afanaciev, et al., Nucl. Instr. Meth. Phys. Res. A. 975, 164204 (2020). https://doi.org/10.1016/j.nima.2020.164204.
A. Lozinskaya, I. Chsherbakov, I. Kolesnikova et al., J. Inst. 14 C11026 (2019). https://doi.org/10.1088/1748-0221/14/11/C11026.
R. M. Wheater, L. Jowitt, S. Richards, et al., Nucl. Instr. Meth. Phys. Res. A, 999, 165207 (2021). https://doi.org/10.1016/j.nima.2021.165207.
S. Tsigaridas, C. Ponchut, O. Tolbanov et al., J. Inst. 16, P01032 (2021). https://doi.org/10.1088/1748-0221/16/01/P01032.
C. Ponchut, M. Cotte, A. Lozinskaya, et al., J. Inst. 12, C12023 (2017). https://doi.org/10.1088/1748-0221/12/12/C12023.
D. Greiffenberg, M. Andrä, R. Barten, et al., Sensors, 21, 1550 (2021). https://doi.org/10.3390/s21041550.
A. Lozinskaya, M .C. Veale, I. Kolesnikova, J. Inst. 16, P02026 (2021). https://doi.org/10.1088/1748-0221/16/02/P02026.
H. Abramowicz, U. Acosta, M. Altarelli, et al., Eur. Phys. J. Spec. Top. 230, 2445 (2021). https://doi.org/10.1140/epjs/s11734-021-00249-z.
M. C. Veale, P. Booker, I. Church et al., Nucl. Instr. Meth. Phys. Res. A, 1025, 166083 (2022). https://doi.org/10.1016/j.nima.2021.166083.
P. Rudolph, Cryst. Res. Technol. 40, 7 (2004). https://doi.org/10.1002/crat.200410302.
G. R. Booker, G. Laczik, and P. Kiddt, Semicond. Sci. Technol., 7, A110 (1992).
J. Windscheif, M. Baeumler, and U. Kaufmann, Appl. Phys. Lett. 46, 661 (1985). https://doi.org/10.1063/1.95913.
J. L. Weyher, P. Gall, L. S. Dang, et a., Semicond. Sci. Technol., 7, A45 (1992). https://doi.org/10.1088/0268-1242/7/1A/009.
A. R. Clawson, Materials Science and Engineering: R: Reports, 31, 1–438 (2001). https://doi.org/10.1016/S0927-796X(00)00027-9.
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Vinnik, A.E., Zarubin, A.N., Chsherbakov, I.D. et al. Macroscopic and Mesoscopic Inhomogeneities of Electrophysical, Optical, and Photoelectric Characteristics in Chromium Compensated Gallium Arsenide Wafers. Russ Phys J 66, 1212–1219 (2024). https://doi.org/10.1007/s11182-023-03064-2
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DOI: https://doi.org/10.1007/s11182-023-03064-2