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Methods of Charge-Carrier Mobility Measurements in Structures Based on High-Resistivity Gallium Arsenide with Deep Centers

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

One of the most important parameters determining the efficiency of X-ray sensors is the μ∙τ product, where μ is the charge-carrier mobility and τ is the carrier lifetime. This paper presents results of measurements of the charge-carrier mobility in high-resistivity (HR) GaAs:Cr sensors using two methods: the laser-induced transient-current technique (LTCT) and the Hall measurements. It has been found that the concentration of holes in the HR GaAs:Cr material exceeds that of electrons, whereas the value of the electron drift mobility is in the range 4000–4300 cm2/(V·s).

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    I. D. Chsherbakov, L. K. Shaimerdenova, A. V. Shemeryankina, M. S. Skakunov, O. P. Tolbanov, A. V. Tyazhev, A. N. Zarubin & M. S. Trofimov

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  1. I. D. Chsherbakov
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  2. L. K. Shaimerdenova
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  3. A. V. Shemeryankina
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  4. M. S. Skakunov
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  5. O. P. Tolbanov
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  6. A. V. Tyazhev
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  7. A. N. Zarubin
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  8. M. S. Trofimov
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Correspondence to I. D. Chsherbakov.

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Chsherbakov, I.D., Shaimerdenova, L.K., Shemeryankina, A.V. et al. Methods of Charge-Carrier Mobility Measurements in Structures Based on High-Resistivity Gallium Arsenide with Deep Centers. Russ Phys J 66, 626–631 (2023). https://doi.org/10.1007/s11182-023-02985-2

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  • DOI: https://doi.org/10.1007/s11182-023-02985-2

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