The behavior of nickel and hydrogen impurities in silicon is studied by the methods of deep-level transient spectroscopy (DLTS) and Raman spectroscopy. It is shown that the vibrations of Ni and H atoms in Si are in the range of 925–985 cm–1. The DLTS spectra in n- and p-type silicon doped with Ni atoms exhibit two deep levels with the energies of Ev + 0.17 eV and Ec – 0.42 eV. It is found out that during chemical etching various hydrogen-bonded defect complexes are formed in Si doped with Ni, the energies of which are Ec – 0.18 eV, Ec – 0.54 eV, Ev + 0.26 eV, and Ev + 0.55 eV.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. L. Benton, Encyclopedia of Materials: Science and Technology, Elsevier (2001).
J. H. Weber, Reference Module in Materials Science and Materials Engineering, Elsevier (2011).
M. Salavati-Niasari, A. Khansari, and F. Davar, Inorg. Chim. Acta., 362, No. 14, 4937 (2009).
F. Fang et al., Int. J. Extrem. Manuf., 1, No. 1, 012001 (2019).
J. Lindroos, D. P. Fenning, D. J. Backlund, et al. // J. Appl. Phys., 113, No. 20, 204906 (2013).
L. Scheffler, V. Kolkovsky, and J. Weber, J. Appl. Phys., 116, No. 17, 173704 (2014).
J. Weber, S. Knack, O. Feklisova, et al., Microelectron. Eng., 66, No. 1–4, 320 (2003).
A. Singhal, S. N. Achary, J. Manjanna, et al., J. Phys. Chem., 114, No. 10, 3422 (2010).
P. Salunkhe et al., Mater. Res. Express., 7, No. 1, 016427 (2020).
J. Xu, C. Wang, T. Wang, et al., RSC Advances, 8, No. 21, 11528 (2018).
S. S. Nasriddinov and D. M. Esbergenov, in: Proc. Republ. Conf. Topical Issues of Physics of Semiconductors and Polymers [in Russian], Tashkent (2022).
V. P. Muhammed Shajudheen et al., Mater. Today: Proc., 3, No. 7, 2450 (2016).
H. Kitagawa, S. Tanaka, H. Nakashima, and M. Yoshida, J. Electron. Mater., 20, No. 6, 441 (1991).
Kh. S. Daliev, J. Sci. Eng. Res., 4, No. 5, 211 (2017).
B. J. Hallam, P. G. Hamer, A. M Ciesla née Wenham, et al., Prog. Photovolt. Res. Appl., 28, No. 12, 1217 (2020).
P. Santos, J. Coutinho, V.J.B. Torres, et al., Appl. Phys. Lett., 105, No. 3, 032108 (2014).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 126–130, September, 2022.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Nasriddinov, S.S., Esbergenov, D.M. A Study of Complex Defect Formation in Silicon Doped With Nickel. Russ Phys J 65, 1559–1563 (2023). https://doi.org/10.1007/s11182-023-02801-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-023-02801-x