Damage Mechanism Analysis and Protection Method of Ionizing Radiation Based on Electromagnetic Radiation Characteristics

This paper studies the damage mechanism and protection method of ionizing radiation damage based on electromagnetic radiation characteristics. In this paper, the ferroelectric layer polarization model was established based on the ferroelectric field effect transistor (FEFET) capacitance variation with gate voltage. This paper analyzed the ionizing radiation damage mechanism of electrical characteristics from two aspects of horizontal voltage and threshold voltage drift. The reinforcement design of the ferroelectric effect transistor was realized by using the anti-transient ionizing radiation reinforcement design method of the FPGA circuit. The three-fold redundancy design method based on instantaneous ionizing radiation effect was applied to protect electronic devices from ionizing radiation in reinforcement design. The results show that the threshold voltage drift caused by the oxide trap charge is proportional to the radiation dose. The threshold voltage drift caused by the interface trap charge is proportional to the radiation dose in the case of low dose, and the relationship is exponential when the radiation dose is greater than 60 krad SiO₂. The delay signal of the FPGA circuit of the FEFET designed by the reinforcement has not been delayed again, to prove the effectiveness of ionizing radiation protection.