GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as well as their temporal stability. The observed spectral positions of the Raman peaks were in agreement with the positions of the peaks known for bulk and nanolayered InSe and GaSe samples.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 50–54, September, 2020.
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Redkin, R.A., Kobtsev, D.A., Bereznaya, S.A. et al. Methods of Preparation and Temporal Stability of GaSe and InSe Nanolayers. Russ Phys J 63, 1504–1509 (2021). https://doi.org/10.1007/s11182-021-02198-5
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DOI: https://doi.org/10.1007/s11182-021-02198-5