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Features of Radiation Changes in Electrical Properties of InAlN/GaN Hemts

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN HEMT structures is analyzed. The features of initial electronic properties of the InAlN and AlGaN barrier layers with a change in their composition, as well as the change in these properties when exposed to high-energy radiation are considered with taking into account the compositional dependence of the charge neutrality level energy position in the energy spectrum of these barrier layers.

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References

  1. A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, et al., IEEE Trans. Nucl. Sci., 49(6), 2733 (2002).

    Article  ADS  Google Scholar 

  2. D. C. Look, D. C. Reynolds, J. H. Hemsky, et al., Phys. Rev. Lett., 79(12), 2273 (1997).

    Article  ADS  Google Scholar 

  3. J. Nord, K. Nordlund, J. Keinonen, et al., Nucl. Instrum. Methods Phys. Res. B, 202, 93 (2003).

    Article  ADS  Google Scholar 

  4. H. Y. Xiao, F. Gao, X. T. Zu, and W. J. Weber, J. Appl. Phys., 105, 123527 (2009).

    Article  ADS  Google Scholar 

  5. S. J. Pearton, Y.-H. Hwang, and F. Ren, ECS Transactions, 66(1), 3 (2015).

    Article  Google Scholar 

  6. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, London (1996).

  7. J. F. Ziegler, SRIM, The Stopping and Range of Ions in Matter, Electronic resource, URL: http://www.srim.org (10.06.2019).

  8. V. N. Brudnyi, N. G. Kolin, and L. S. Smirnov, Semiconductors, 41(9), 1011 (2007).

    Article  ADS  Google Scholar 

  9. V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin, Semiconductors, 37(5), 537 (2003).

    Article  ADS  Google Scholar 

  10. V. N. Brudnyi, A. V. Kosobutskii, and N. G. Kolin, Russ. Phys. J., 51, No. 12, 1270 (2008).

    Article  Google Scholar 

  11. V. N. Brudnyi, A. V. Kosobutskii, and N. G. Kolin, Semiconductors, 43(10), 1271 (2009).

    Article  ADS  Google Scholar 

  12. V. N. Brudnyi, V. M. Boiko, N. G. Kolin, et al., Semicond. Sci. Technol., 33, 095011 (2018).

    Article  ADS  Google Scholar 

  13. A. Castaldini, A. Cavallini, L. Polenta, et al., J. Phys. Condens. Matter., 12, 10161 (2000).

    Article  ADS  Google Scholar 

  14. F. D. Auret, S. A. Goodman, F. K. Koschnick, et al., Appl. Phys. Lett., 74, 407 (1999).

    Article  ADS  Google Scholar 

  15. F. D. Auret, S. A. Goodman, F. K. Koschnick, et al., Appl. Phys. Lett., 73, 3745 (1998.

    Article  ADS  Google Scholar 

  16. A. Ya. Polyakov, A. S. Usikov, B. Theys, et al., Solid-State Electron., 44, 1971 (2000).

  17. S. J. Pearton and A.Ya. Polyakov, Int. J. Mater. Structural Integrity., 2, 93 (2008).

  18. K. C. Collins, A. M. Armstrong, A. A. Allerman, et al., J. Appl. Phys., 122, 235705 (2017).

    Article  ADS  Google Scholar 

  19. Z. Zhang, E. Farzana, W. Y. Sun, et al., J. Appl. Phys., 118, 155701 (2015).

    Article  ADS  Google Scholar 

  20. P. N. M. Ngoepe, W. E. Meyer, and F. D. Auret, Mater. Sci. Semicond. Process., 64, 29 (2017).

    Article  Google Scholar 

  21. Z. Zhang, A. R. Arehart, E. Cinkilic, et al., Appl. Phys. Lett., 103, 042102 (2013).

    Article  ADS  Google Scholar 

  22. S. A. Goodman, F. D. Auret, M. J. Legodi, et al., Appl. Phys. Lett., 78, 3815 (2001).

    Article  ADS  Google Scholar 

  23. N. M. Shmidt, D. V. Davydov, V. V. Emtsev, et al., Phys. Stat. Sol. (b), 216, 533 (1999).

    Article  ADS  Google Scholar 

  24. Z.-Q. Fang, J. W. Hemsky, D. C. Look, et al., Appl. Phys. Lett., 72, 448 (1998).

    Article  ADS  Google Scholar 

  25. L. Polenta, Z.-Q. Fang, and D. C. Look, Appl. Phys. Lett., 76, 2086 (2000).

    Article  ADS  Google Scholar 

  26. C.-W. Wang, B.-S. Soong, J.-Y. Chen, et al., J. Appl. Phys., 88, 6355 (2000).

    Article  ADS  Google Scholar 

  27. A.Ya. Polyakov, In-Hwan Lee, N. B. Smirnov, et al., J. Appl. Phys., 109, 123703 (2011).

  28. Duc Tran Thien, Pozina Galia, Son Nguyen Tien, et al., J. Appl. Phys., 119, 095707 (2016).

  29. P. N. M. Ngoepe, W. E. Meyer, F. D. Auret, et al., Physica B, 535, 96 (2018).

    Article  ADS  Google Scholar 

  30. S. A. Goodman, F. D. Auret, G. Myburg, et al., Mater. Sci. Eng. B, 82, 95 (2001).

    Article  Google Scholar 

  31. I-H. Lee, A. Y. Polyakov, E. B. Yakimov, et al., Appl. Phys. Lett., 110, 112102 (2017).

    Article  ADS  Google Scholar 

  32. V. N. Brudnyi, S. S. Verevkin, A. V. Govorkov, et al., Semiconductors, 46(4), 433 (2012).

    Article  ADS  Google Scholar 

  33. J. Kuzmik, IEEE Electron Device Lett., 22(11), 510 (2001).

    Article  ADS  Google Scholar 

  34. I. Rossetto, F. Rampazzo, et al., Proc. of 44-th European Sol. State Device Research Conf. (ESSDERC), Venice, Italy (2014).

  35. I. Rossetto, F. Rampazzo, S. Gerardin, et al., Sol.-State Electron., 113, 15 (2015).

  36. C.-F. Lo, L. Liu, F. Ren, et al., J. Vac. Sci. Technol. B, 30(4), 041206 (2012).

  37. H.-Y. Kim, C. F. Lo, L. Liu, et al., Appl. Phys. Lett., 100, 2107 (2012).

    Google Scholar 

  38. C.-F. Lo, L. Liu, F. Ren, et al., J. Vac. Sci. Technol. B, 29(6), 061201 (2011).

  39. C.-F. Lo, L. Liu, T. S. Kang, et al., J. Vac. Sci. Technol. B, 30(3), 031202 (2012).

  40. S. Ahn, B.-J. Kim, Y.-H. Lin, and F. Ren, J. Vac. Sci. Technol. B, 43(5), 051202 (2016).

  41. T. Anderson, A. Koehler, Y.-H. Hwang, et al., J. Vac. Sci. Technol. B, 32(5), 051203 (2014).

  42. Y.-S. Hwang, L. Liu, F. Ren, et al., J. Vac. Sci. Technol. B, 31(2), 022206 (2013).

  43. H.-Y. Kim, J. Kim, L. Liu, et al., J. Vac. Sci. Technol. B, 31(5), 051210 (2013).

  44. M. D. Smith, D. O’Mahony, F. Vitobello, et al., Semicond. Sci. Technol., 31, 025008 (2016).

  45. M. D. Smith, Development of InAlN HEMTs for space application: PhD Thesis, University College Cork, Ireland (2016).

  46. A.Ya. Polyakov, N. B. Smirnov, A. V. Govorkov, et al., J. Vac. Sci. Technol. B, 30(6), 061207 (2012).

  47. N. Dawahre and C. Shen, J. Vac. Sci. Technol. B, 31, 041802 (2013).

  48. R. Butte, J-F. Carlin, E. Feltin, et al., J. Phys. D: Appl. Phys., 40, 6328 (2007).

  49. Y. Taniyasu, J.-F. Carlin, A. Castiglia, et al., Appl. Phys. Lett., 101, 082113 (2012).

    Article  ADS  Google Scholar 

  50. M. Goncshorek, J.-F. Carlin, E. Feltin, et al., J. Appl. Phys., 103, 093714 (2008).

  51. S. Yamaguchi, M. Kariya, S. Nitta, et al., Appl. Phys. Lett., 76(7), 876 (2000).

    Article  ADS  Google Scholar 

  52. J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett., 79(20), 3245 (2001).

    Article  ADS  Google Scholar 

  53. S. Schulz, M. A. Caro, L.-T. Tan, et al., Appl. Phys. Express., 6(12), 1 (2013).

    Article  Google Scholar 

  54. D. C. King, T. D. Veal, P. H. Jefferson, et al., Appl. Phys. Lett., 90, 132105 (2007).

    Article  ADS  Google Scholar 

  55. S.-C. Lin, C.-T. Kim, X. Liu, et al., Appl. Phys. Express., 5, 031003 (2012).

    Article  ADS  Google Scholar 

  56. S. X. Li, K. M. Yu, R. E. Jones, et al., Phys. Rev. B, 71, 161201(R) (2005).

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    A. G. Afonin, V. N. Brudnyi, P. A. Brudnyi & L. E. Velikovskii

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  1. A. G. Afonin
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  2. V. N. Brudnyi
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  3. P. A. Brudnyi
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  4. L. E. Velikovskii
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Correspondence to A. G. Afonin.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 106–112, September, 2019.

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Afonin, A.G., Brudnyi, V.N., Brudnyi, P.A. et al. Features of Radiation Changes in Electrical Properties of InAlN/GaN Hemts. Russ Phys J 62, 1656–1662 (2020). https://doi.org/10.1007/s11182-020-01888-w

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  • DOI: https://doi.org/10.1007/s11182-020-01888-w

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