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Non-Quasi-Static p-n Junction Model Without User-defined Recursion

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Russian Physics Journal Aims and scope

A model of the p–n junction that adequately describes the non-quasi-static effects of accumulation and relaxation of nonequilibrium charge carriers is considered. In this case, the diffusion charge equation is written in a closed form resolved with respect to the diffusion charge. This allowed computer programming of this model to be performed without user-defined recursion resolving the differential equation with respect to the diffusion charge. As a result, the non-quasi-static model of the p–n junction has been realized as an equivalent circuit containing only conventional quasi-static elements of computer-aided design systems.

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Authors and Affiliations

  1. Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia

    É. V. Semyonov

  2. JSC “Scientific-Research Institute of Semiconductor Devices”, Tomsk, Russia

    O. Yu. Malakhovskij

Authors
  1. É. V. Semyonov
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  2. O. Yu. Malakhovskij
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Correspondence to É. V. Semyonov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 151–156, June, 2019.

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Semyonov, É.V., Malakhovskij, O.Y. Non-Quasi-Static p-n Junction Model Without User-defined Recursion. Russ Phys J 62, 1090–1095 (2019). https://doi.org/10.1007/s11182-019-01819-4

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  • DOI: https://doi.org/10.1007/s11182-019-01819-4

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