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Contribution of Mechanical Stresses to the Surface Relief Formation Under Laser Irradiation of Semiconductors

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The paper considers the effect of elastic stresses arising under pulsed laser irradiation of epitaxial layers of CdxHg1–xTe solid solutions on the formation of a periodic surface relief as a result of recrystallization of material melted by radiation.

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Authors and Affiliations

  1. Peter the Great Military Academy of Strategic Missile Forces, Balashikha, Russia

    V. G. Sredin, M. V. Sakharov & N. Kh. Talipov

  2. National Research Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii

Authors
  1. V. G. Sredin
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  2. A. V. Voitsekhovskii
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  3. M. V. Sakharov
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  4. N. Kh. Talipov
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Corresponding author

Correspondence to V. G. Sredin.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 125–128, June, 2019.

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Sredin, V.G., Voitsekhovskii, A.V., Sakharov, M.V. et al. Contribution of Mechanical Stresses to the Surface Relief Formation Under Laser Irradiation of Semiconductors. Russ Phys J 62, 1062–1065 (2019). https://doi.org/10.1007/s11182-019-01814-9

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  • DOI: https://doi.org/10.1007/s11182-019-01814-9

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