Skip to main content
SpringerLink
Log in

Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer

  • Published:
Russian Physics Journal Aims and scope

For the depletion and accumulation modes, equivalent circuits of MIS structure based on an organic P3HT thin film with an Al2O3 insulator are proposed. The frequency dependences of the capacitance and conductance of an organic MIS structure were simulated at a temperature of 300 K in the frequency range of 20 Hz – 2 MHz. It is shown that the measured values of the capacitance and conductance substantially depend on the thickness of the insulator layer, the thickness and specific conductance of the organic film, the parameters of surface traps, the frequency and bias voltage. Methods for determining the values of the basic elements of the equivalent circuit for the correct characterization of traps at the inorganic insulator – organic film interface are described.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. N. K. Elumalai and A. Uddin, Energy and Environmental Science, 9, No. 2, 391–410 (2016).

    Article  Google Scholar 

  2. D. Zhao, Z. Qin, J. Huang, et al., Organic Electron., 51, 220–242 (2017).

    Article  Google Scholar 

  3. C. Soldano, G. Generali, E. Cianci, et al., Thin Solid Films, 616, 408–414 (2016).

    Article  ADS  Google Scholar 

  4. P. Pingel, R. Schwarzl, and D. Neher, Appl. Phys. Lett., 100, No. 14, 87 (2012).

    Article  Google Scholar 

  5. N. Chosei and E. Itoh, Jpn. J. Appl. Phys., 57, No. 2S2, 02CA05 (2018).

    Article  Google Scholar 

  6. K. Moraki, S. Bengi, S. Zeyrek, et al., J. Mater. Sci. Mater. Electron., 28, No. 5, 3987–3996 (2017).

    Article  Google Scholar 

  7. A. Kaya, H. Decimeter, Ö. Vural, et al., IEEE Trans. Electron Dev., 61, No. 2, 584–590 (2014).

    Article  ADS  Google Scholar 

  8. W. T. Wondmagegn, N. T. Satyala, I. Mejia-Silva, et al., Thin Solid Films, 519, No. 13, 4313–4318 (2011).

    Article  ADS  Google Scholar 

  9. M. E. Aydin, F. Yakuphangon, J. H. Eom, et al., Physica B: Condensed Matter., 387, No. 1–2, 239–244 (2007).

    Article  ADS  Google Scholar 

  10. K. Harada, A. G. Werner, M. Pfeiffer, et al., Phys. Rev. Lett., 94, No. 3, 036601 (2005).

    Article  ADS  Google Scholar 

  11. I. Torres and D. M. Taylor, J. Appl. Phys., 98, No. 7, 073710 (2005).

    Article  ADS  Google Scholar 

  12. R. Ledru, S. Pleutin, B. Grouiez, et al., Organic Electron., 13, No. 10, 1916–1924 (2012).

    Article  Google Scholar 

  13. N. Alves and D. M. Taylor, Appl. Phys. Lett., 92, No. 10, 92 (2008).

    Article  Google Scholar 

  14. Y. S. Yang, S. H. Kim, J. I. Lee, et al., Appl. Phys. Lett., 80, No. 9, 1595–1597 (2002).

    Article  ADS  Google Scholar 

  15. O. J. Sandburg, M. Nyman, S. Dahlström, et al., Appl. Phys. Lett., 110, No. 15, 153504 (2017).

    Article  ADS  Google Scholar 

  16. C. Katagiri, T. Yoshiba, M. S. White, et al., AIP Advances, 8, No. 10, 105001 (2018).

    Article  ADS  Google Scholar 

  17. I. V. Romanov, A. V. Voitsekhovskii, K. M. Degtyarenko, et al., Russ. Phys. J., 57, No. 11, 1584–1592 (2014).

    Article  Google Scholar 

  18. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley, New York (1982).

    Google Scholar 

  19. S. M. Sze and K. Ng Kwok, Physics of Semiconductor Devices, 3rd ed., Wiley, New York (2007).

    Google Scholar 

  20. E. Bezzeccheri, A. Femia, R. Liguori, et al., Mater. Today: Proc., 4, No. 4, 5045–5052 (2017).

    Google Scholar 

  21. H. Hirwa, S. Pittner, and V. Wagner, Organic Electron., 24, 303–314 (2015).

    Article  Google Scholar 

  22. M. Estrada, F. Ulloa, M. Avila, et al., IEEE Trans. Electron Dev., 60, 2057–2063 (2013).

    Article  ADS  Google Scholar 

  23. R. A Liguori, Study on Defects in Organic Semiconductors for Field Effect Transistors, Tesi di Dottorato (2014).

  24. R. S. Akhmatova, Solid State Commun., 19, No. 9, 745–758 (1976).

    Google Scholar 

  25. R. S. Nakhmanson, Solid State Commun, 18, No. 7–8, 617–626 (1975).

    Google Scholar 

  26. A. Van Calster and L. Van Den Driessche, IEEE Trans. Electron Dev., 26, No. 5, 765–775 (1979).

    Article  ADS  Google Scholar 

  27. B. Lüssem, M. L. Tietze, H. Kleemann, et al., Nature Commun., 4, 2775 (2013).

    Article  Google Scholar 

  28. J. J. Brondijk, M. Spijkman, F. Van Seijen, et al., Phys. Rev. B, 85, No. 16, 165310 (2012).

    Article  ADS  Google Scholar 

  29. E. Itoh, I. Torres, and D. M. Taylor, Jpn. J. Appl. Phys., 44, No. 1S, 641 (2005).

    Article  ADS  Google Scholar 

  30. A. V. Voitsekhovskii, S. N. Nesmelov, and S. M. Dzyadukh, Russ. Phys. J., 48, No. 6, 584–591 (2005).

    Article  Google Scholar 

  31. M. Yun, R. Ravindram, M. Hossain, et al., Appl. Phys. Lett., 89, No. 1, 013506 (2006).

    Article  ADS  Google Scholar 

  32. S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov, et al., Russ. Phys. J., 60, No. 11,1853–1862 (2017).

    Article  Google Scholar 

  33. R. Fu and J. Pattison, Opt. Eng., 51, No. 10, 104003 (2012).

    Article  ADS  Google Scholar 

  34. M. Yun, S. Gangopadhyay, M. Bai, et al., Organic Electron., 8, No. 5, 591– 600 (2007).

    Article  Google Scholar 

  35. J. Li, M. Weis, D. Taguchi, et al., J. Appl. Phys., 111, No. 2, 023706 (2012).

    Article  ADS  Google Scholar 

  36. E. Itoh and K. Miyari, Thin Solid Films, 499, No. 1–2, 95–103 (2006).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii, S. N. Nesmelov & S. M. Dzyadukh

  2. V. D. Kuznetsov Siberian Physical Technical Institute at Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii

Authors
  1. A. V. Voitsekhovskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. N. Nesmelov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. M. Dzyadukh
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. V. Voitsekhovskii.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 162–169, November, 2018.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Voitsekhovskii, A.V., Nesmelov, S.N. & Dzyadukh, S.M. Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer. Russ Phys J 61, 2126–2134 (2019). https://doi.org/10.1007/s11182-019-01646-7

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11182-019-01646-7

Keywords

Search

Navigation