The interaction of electrons from the conduction band of the barrier layer of a LED heterostructure with the quantum well size-quantization level described by the capture time and emission time of charge carriers is considered. Relaxation of an excess energy upon capture and emission of charge carriers occurs as a result of their collisions with phonons of the quantum well substance and the “barrier layer-quantum well” interface. Analytical expressions are obtained for the interaction times, taking into account the depth of the sizequantization level, involved in the interaction with electrons, and the width of the well. Numerical estimates show that in real conditions, the capture time is shorter than the emission time, and this difference increases with increasing depth of the level. At shallow depths, the capture and emission times are comparable.
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03 December 2018
The last paragraph of the article should read “This work is performed with financial support of the Ministry of Education and Science of the Russian Federation within the framework of the federal target program “Research and development in priority areas of development of the scientific and technological complex of Russia for 2014-2020”, Unique identifier of the work (project) RFMEFI57717X0266.”
References
Z. N. Sokolova, I. S. Tarasov, and L. V. Asryan, Fiz. Tekh. Poluprovodn., 45, Vyp. 11, 1553–1559 (2011).
Z. N. Sokolova, I. S. Tarasov, and L. V. Asryan, Fiz. Tekh. Poluprovodn., 46, Vyp. 11, 1067–1073 (2012).
Z. N. Sokolova, I. S. Tarasov, N. A. Pikhtin, and L. V. Asryan, Fiz. Tekh. Poluprovodn., 49, Vyp. 11, 1553–1557 (2015).
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskii, et. al., Fiz. Tekh. Poluprovodn., 50, Vyp. 5, 679–682 (2016).
A. Hori, D. Yasunaga, A. Satake, and K. Fujiwara, Appl. Phys. Lett., 79, 3723 (2001).
M. H. Kim, M. F. Schubert, Q. Dai, et al., Appl. Phys. Lett., 91, 183–507 (2007).
L. A. Pope, P. M. Smowton, P. Blood, et al., Appl. Phys. Lett., 83, 2755 (2003).
D. Yan, H. Lu, D. Chen, et al., Appl. Phys. Lett., 95, 083 (2010).
N. I. Bochkareva, D. V. Tarkhin, Yu. T. Rebane, et al., Fiz. Tekh. Poluprovodn., 41, No. 1, 88–95 (2007).
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, et al., Fiz. Tekh. Poluprovodn., 46, Vyp. 8, 1054–1062 (2012).
D. Zhu, J. Xu, A. N. Noemaun, et al., Appl. Phys. Lett., 94, 081–113 (2009).
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, et al., Fiz. Tekh. Poluprovodn., 47, Vyp. 1, 129–136 (2013).
V. N. Abakumov V. I. Perel’, and I. N. Yassievich, Zh. Exp. Teor. Fiz., 72, 674–779 (1977).
V. Ya. Aleshkin and L. V. Gavrilrnko Fiz. Tekh. Poluprovodn., 51, Vyp. 11, 1498–1502 (2017).
A. Milns, Impurities with Deep Levels in Semiconductors, ed. M. K. Sheikman [Russian translation], Mir, Moscow (1977).
E. F. Schubert, Light-Emitted Diodes, Cambridge (2006).
J. Vungaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys., 89, Nо. 11, 5815–5875 (2001).
V. I. Zubkov, Fiz. Tekh. Poluprovodn., 40, Vyp. 10, 1236–1241 (2006).
V. N. Davydov and D. A. Novikov, Dokl. TUSUR, Vyp. 1 (35), 64–73 (2015).
V. N. Davydov and A. N. Morgunov, Russ. Phys. J., 58, No. 11, 1619–1626 (2015).
V. N. Davydov and D. A. Novikov, Russ. Phys. J., 58, No. 7, 987–995 (2015).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 19–25, February, 2018.
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Davydov, V.N., Karankevich, O.A. Capture and Emission of Charge Carriers by Quantum Well. Russ Phys J 61, 223–231 (2018). https://doi.org/10.1007/s11182-018-1389-3
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DOI: https://doi.org/10.1007/s11182-018-1389-3