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Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

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Russian Physics Journal Aims and scope

The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are presented. It is shown that a decrease in the thickness of the GaN barrier layers from 15 to 3 nm leads to an increase in the maximum value of IQE and to a shift of the maximum to the region of high excitation powers. The result obtained is explained with consideration for the decrease in the Auger recombination rate due to a more uniform distribution of charge carriers over the active region in structures with a barrier thickness of 3 nm.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    I. S. Romanov, I. A. Prudaev & V. V. Kopyev

Authors
  1. I. S. Romanov
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  2. I. A. Prudaev
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  3. V. V. Kopyev
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Correspondence to I. S. Romanov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 8–11, February, 2018.

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Romanov, I.S., Prudaev, I.A. & Kopyev, V.V. Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells. Russ Phys J 61, 211–215 (2018). https://doi.org/10.1007/s11182-018-1387-5

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  • DOI: https://doi.org/10.1007/s11182-018-1387-5

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