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Quasi-Two-Dimensional Electron–Hole Liquid in Shallow SiGe/Si Quantum Wells

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

An analytical expression is obtained for the energy of a quasi-two-dimensional electron-hole liquid (EHL) in shallow quantum wells. It is shown that in the Si/Si1–xGex/Si structures with small x, the EHL contains light and heavy holes. With increasing x, the transition of EHL to a state with heavy holes occurs, and the equilibrium density of electron-hole pairs strongly decreases. The effect of an external electric field on the EHL properties is studied.

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Authors and Affiliations

  1. Kuban State Technological University, Krasnodar, Russia

    A. A. Vasilchenko

  2. Kuban State University, Krasnodar, Russia

    A. A. Vasilchenko & G. F. Kopytov

  3. P. N. Lebedev Physical Institute, Moscow, Russia

    V. S. Krivobok

  4. National Research Nuclear University “MEPhI”, Moscow, Russia

    V. S. Krivobok

Authors
  1. A. A. Vasilchenko
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  2. G. F. Kopytov
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  3. V. S. Krivobok
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Corresponding author

Correspondence to A. A. Vasilchenko.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 3–7, February, 2018.

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Vasilchenko, A.A., Kopytov, G.F. & Krivobok, V.S. Quasi-Two-Dimensional Electron–Hole Liquid in Shallow SiGe/Si Quantum Wells. Russ Phys J 61, 205–210 (2018). https://doi.org/10.1007/s11182-018-1386-6

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  • DOI: https://doi.org/10.1007/s11182-018-1386-6

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