Russian Physics Journal

, Volume 60, Issue 12, pp 2186–2192 | Cite as

High-Sensitive Two-Layer Photoresistors Based on p-Cd x Hg1–xTe with a Converted Near-Surface Layer

  • N. D. Ismailov
  • N. Kh. Talipov
  • A. V. Voitsekhovskii

The results of an experimental study of photoelectric characteristics of two-layer photoresistors based on р-Cd x Hg1–xTe (x = 0.24−0.28) with a thin near-surface layer of n-type obtained by treatment in atmospheric gas plasma are presented. It is shown that the presence of a potential barrier between the p- and n-regions causes high photosensitivity and speed of operation of such photoresistors at T = 77 K


CdHgTe photoresistors converted layers potential barrier relaxation time photosensitivity 


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Authors and Affiliations

  • N. D. Ismailov
    • 1
  • N. Kh. Talipov
    • 2
  • A. V. Voitsekhovskii
    • 3
  1. 1.Institute of Physics, Azerbaijan National Academy of SciencesBakuAzerbaijan Republic
  2. 2.Peter the Great Military Academy of Strategic Rocket ForcesBalashikhaRussia
  3. 3.National Research Tomsk State UniversityTomskRussia

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