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High-Sensitive Two-Layer Photoresistors Based on p-Cd x Hg1–xTe with a Converted Near-Surface Layer

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Russian Physics Journal Aims and scope

The results of an experimental study of photoelectric characteristics of two-layer photoresistors based on р-Cd x Hg1–xTe (x = 0.24−0.28) with a thin near-surface layer of n-type obtained by treatment in atmospheric gas plasma are presented. It is shown that the presence of a potential barrier between the p- and n-regions causes high photosensitivity and speed of operation of such photoresistors at T = 77 K

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Authors and Affiliations

  1. Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan Republic

    N. D. Ismailov

  2. Peter the Great Military Academy of Strategic Rocket Forces, Balashikha, Russia

    N. Kh. Talipov

  3. National Research Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii

Authors
  1. N. D. Ismailov
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  2. N. Kh. Talipov
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  3. A. V. Voitsekhovskii
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Corresponding author

Correspondence to N. D. Ismailov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 122–127, December, 2017.

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Ismailov, N.D., Talipov, N.K. & Voitsekhovskii, A.V. High-Sensitive Two-Layer Photoresistors Based on p-Cd x Hg1–xTe with a Converted Near-Surface Layer. Russ Phys J 60, 2186–2192 (2018). https://doi.org/10.1007/s11182-018-1344-3

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  • DOI: https://doi.org/10.1007/s11182-018-1344-3

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