The type of electrical conductivity of А1В35С68 semiconductor compounds with defective crystalline structure is modified by the influence of powerful laser radiation. It is shown that at certain power and wavelength of laser radiation acting on the single-crystal п-AgIn5S8, an area with the p-type of conductivity is formed in the irradiated region of the crystal. Current-voltage characteristics of homo-junctions created on the basis of n-AgIn5S8 are recorded.
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References
I. S. Shlimak, Fiz. Tverd. Tela, 41, No. 5, 794–798 (1999).
S. S. Gorelik and M. Ya. Dashevskii, Semiconductor Materials Technology and Physical Metallurgy [in Russian], Vyssh. Shkola, Moscow (2008).
Yu. M. Tairov and V. F. Tsvetkov, Technology of Semiconductor and Dielectric Materials [in Russian], Vyssh. Shkola, Moscow (2007).
A. M. Efremov, V. I. Svettsov, and V. V. Rybkin, Vacuum Plasma Processes and Technologies, Textbook [in Russian], Ivanovo State University of Chemistry and Technology, Ivanovo (2006).
C. H. Lai, C. Y. Chiang, P. C. Lin, et al., ACS Appl. Mater. Interfaces, 5, No. 9, 3530–3540 (2013).
S. M. Sze, Physics of Semiconductor Devices [Russian translation], Mir, Moscow (1984).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 88–91, October, 2017.
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Guseinov, A.G., Salmanov, V.M., Mamedov, R.M. et al. A New Method of Obtaining an n–p-Structure on the Basis of the Defective Semiconductor AgIn5S8. Russ Phys J 60, 1747–1751 (2018). https://doi.org/10.1007/s11182-018-1277-x
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DOI: https://doi.org/10.1007/s11182-018-1277-x