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Mechanisms of Current Flow in the Diode Structure with an n+–p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film

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Temperature dependences of current-voltage characteristics of the photoelectric converter with an antireflective film of porous silicon and an n+–p-junction formed by thermal diffusion of phosphorus from a porous film is studied. The porous silicon film was saturated with phosphorus during its growing by electrochemical method. It is shown that the current flow processes in the structure under study are significantly influenced by traps.

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Authors and Affiliations

  1. Ryazan State University named for S. Yesenin, Ryazan, Russia

    V. V. Tregulov

  2. Ryazan State Radio Engineering University, Ryazan, Russia

    V. G. Litvinov & A. V. Ermachikhin

Authors
  1. V. V. Tregulov
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  2. V. G. Litvinov
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  3. A. V. Ermachikhin
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Corresponding author

Correspondence to V. V. Tregulov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 94–99, September, 2017.

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Tregulov, V.V., Litvinov, V.G. & Ermachikhin, A.V. Mechanisms of Current Flow in the Diode Structure with an n+–p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film. Russ Phys J 60, 1565–1571 (2018). https://doi.org/10.1007/s11182-018-1252-6

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  • DOI: https://doi.org/10.1007/s11182-018-1252-6

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