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Properties of Nanocomposite Nickel-Carbon Films Deposited by Magnetron Sputtering

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Russian Physics Journal Aims and scope

The method of magnetron sputtering was used to produce a-C and a-C:Ni films on substrates of monocrystalline silicon and thermoelectric material of n-type ((Bi2Te3)0.94(Bi2Se3)0.06) and p-type ((Bi2Te3)0.20(Sb2Te3)0.80) conductivity. The authors studied the effect of Ni concentration on specific electric resistance, hardness and adhesion of the produced films. It was demonstrated that specific resistance of a-C films deposited by graphite target sputtering when supplying high bias voltage onto the substrate can be reduced by increasing the share of graphitized carbon. Adding Ni to such films allows additionally reducing their specific resistance. The increase in Ni content is accompanied with the decrease in hardness and adhesion of a-C:Ni films. The acquired values of specific electric resistance and adhesion of a-C:Ni films to thermoelectric materials allow using them as barrier anti-diffusion coatings of thermoelectric modules.

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Authors and Affiliations

  1. Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia

    A. S. Grenadyorov, K. V. Oskomov, A. A. Solov’ev, S. V. Rabotkin, A. N. Zakharov, V. A. Semenov & V. O. Oskirko

  2. National Research Tomsk Polytechnic University, Tomsk, Russia

    A. A. Solov’ev, Yu. I. Yelgin & O. S. Korneva

Authors
  1. A. S. Grenadyorov
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  2. K. V. Oskomov
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  3. A. A. Solov’ev
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  4. S. V. Rabotkin
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  5. A. N. Zakharov
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  6. V. A. Semenov
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  7. V. O. Oskirko
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  8. Yu. I. Yelgin
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  9. O. S. Korneva
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Corresponding author

Correspondence to A. S. Grenadyorov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 21–25, August, 2017.

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Grenadyorov, A.S., Oskomov, K.V., Solov’ev, A.A. et al. Properties of Nanocomposite Nickel-Carbon Films Deposited by Magnetron Sputtering. Russ Phys J 60, 1285–1290 (2017). https://doi.org/10.1007/s11182-017-1209-1

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  • DOI: https://doi.org/10.1007/s11182-017-1209-1

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