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To the Theory of Electron Passage in a Semiconductor Structure Consisting of Alternating Asymmetric Rectangular Potential Wells and Barriers

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Propagation of electron waves in a medium, whose properties vary only along a certain direction, is theoretically studied. The approach is based on the use of the single-electron stationary Schrödinger equation for the description of elastic scattering processes, including tunneling, of non-interacting spinless particles while maintaining their total energy.

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Authors and Affiliations

  1. Fergana State University, Fergana, Republic of Uzbekistan

    V. R. Rasulov

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  1. V. R. Rasulov
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Correspondence to V. R. Rasulov.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 156–159, October, 2016.

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Rasulov, V.R. To the Theory of Electron Passage in a Semiconductor Structure Consisting of Alternating Asymmetric Rectangular Potential Wells and Barriers. Russ Phys J 59, 1699–1702 (2017). https://doi.org/10.1007/s11182-017-0963-4

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  • DOI: https://doi.org/10.1007/s11182-017-0963-4

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