Analytical expressions are obtained for the energy of a quasi-two-dimensional electron-hole liquid (EHL) and the threshold value of the barrier height for electrons, above which formation of the direct EHL is impossible. It is shown that the state with a quasi-two-dimensional EHL can be energetically favorable in semiconductors with the anisotropy of masses and (or) a large number of equivalent valleys. A comparison of the calculation results with the experimental data for the Si/SiGe/Si structure is made.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 151–155, October, 2016.
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Vasilchenko, A.A., Kopytov, G.F., Krivobok, V.S. et al. Stability of Quasi-Two-Dimensional Electron-Hole Liquid in Semiconductor Structures of the Type-II. Russ Phys J 59, 1693–1698 (2017). https://doi.org/10.1007/s11182-017-0962-5
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DOI: https://doi.org/10.1007/s11182-017-0962-5