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Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm–3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

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Authors and Affiliations

  1. Institute of Metallurgy and Materials Science of Polish Academy of Sciences, Krakow, Poland

    Z. Świątek & P. Ozga

  2. Scientific-Research Company “Carat”, Lviv, Ukraine

    I. I. Izhnin & E. I. Fitsych

  3. National Research Tomsk State University, Tomsk, Russia

    I. I. Izhnin, A. V. Voitsekhovskii, A. G. Korotaev & S. A. Dvoretsky

  4. Ioffe Institute, St. Petersburg, Russia

    K. D. Mynbaev

  5. St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia

    K. D. Mynbaev

  6. A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia

    V. S. Varavin, S. A. Dvoretsky, N. N. Mikhailov & M. V. Yakushev

  7. Ya. S. Pidstrygach Institute for Applied Problems of Mechanics and Mathematics of the National Academy of Sciences of Ukraine, Lviv, Ukraine

    A. Yu. Bonchyk & H. V. Savytsky

Authors
  1. Z. Świątek
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  2. P. Ozga
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  3. I. I. Izhnin
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  4. E. I. Fitsych
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  5. A. V. Voitsekhovskii
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  6. A. G. Korotaev
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  7. K. D. Mynbaev
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  8. V. S. Varavin
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  9. S. A. Dvoretsky
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  10. N. N. Mikhailov
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  11. M. V. Yakushev
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  12. A. Yu. Bonchyk
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  13. H. V. Savytsky
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Corresponding author

Correspondence to Z. Świątek.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 110–113, March, 2016.

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Świątek, Z., Ozga, P., Izhnin, I.I. et al. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy. Russ Phys J 59, 442–445 (2016). https://doi.org/10.1007/s11182-016-0792-x

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  • DOI: https://doi.org/10.1007/s11182-016-0792-x

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