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Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density

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Russian Physics Journal Aims and scope

Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the quantum efficiency with increasing temperature is observed. Simulation of the dependences of the quantum efficiency of LED structures on the current showed that, if account is taken of the ballistic and hopping transport of charge carriers in the active region of the structure, the calculated and experimental dependences are in good agreement. A decrease in the thickness of the active region of the structure leads to a weakening of the temperature dependence of the quantum efficiency at high current density.

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References

  1. N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, et al., Semiconductors, 39, No. 5, 594–599 (2005).

    Article  ADS  Google Scholar 

  2. C. H. Wang, J. R. Chen, C. H. Chiu, et al., IEEE Photon. Tech. Lett., 22, 236–238 (2010).

    Article  ADS  Google Scholar 

  3. I. Prudaev, O. Tolbanov, and S. Khludkov, Phys. Status Solidi A, 212, No. 5, 930–934 (2015).

    Article  Google Scholar 

  4. I. E. Titkov, S. Yu. Karpov, A. Yadav, et al., IEEE J. Quant. Electron., 50, 991–920 (2014).

    Article  Google Scholar 

  5. I. A. Prudaev, I. Yu. Golygin, S. B. Shirapov, et al., Semiconductors, 47, No. 10, 1382–1386 (2013).

    Article  Google Scholar 

  6. I. A. Prudaev, I. S. Romanov, V. V. Kop’ev, et al., Russ. Phys. J., 56, No. 7, 757–759 (2013).

    Article  Google Scholar 

  7. Y. C. Shen, G. O. Muller, S. Watanabe, et al., Appl. Phys. Lett., 91, 141101 (2007).

    Article  ADS  Google Scholar 

  8. I. A. Prudaev, S. S. Khludkov, M. S. Skakunov, and O. P. Tolbanov, Instrum. Exp. Tech., 53, 530–535 (2010).

    Article  Google Scholar 

  9. X. Ni, X. Li, J. Lee, et al., Superlattices Microstruct., 48, 133 (2010).

    Article  ADS  Google Scholar 

  10. A. I. Anselm, Introduction to the Theory of Semiconductors [in Russian], Nauka, Moscow (1978).

    Google Scholar 

Download references

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    I. A. Prudaev, V. V. Kopyev, I. S. Romanov & V. N. Brudnyi

Authors
  1. I. A. Prudaev
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  2. V. V. Kopyev
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  3. I. S. Romanov
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  4. V. N. Brudnyi
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Correspondence to I. A. Prudaev.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 53–56, May, 2015.

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Prudaev, I.A., Kopyev, V.V., Romanov, I.S. et al. Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density. Russ Phys J 58, 641–645 (2015). https://doi.org/10.1007/s11182-015-0545-2

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  • DOI: https://doi.org/10.1007/s11182-015-0545-2

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