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Polarization Properties of MQW InGaN/GaN Heterostructures Under Heating

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Russian Physics Journal Aims and scope

Mechanisms of formation of polarization in LED InGaN/GaN heterostructures under heating are considered. It is established that the polarization is created as a result of the pyroelectric effect, the joint action of the direct and inverse piezoelectric effects taking into account the thermal expansion of the crystal, elastic properties, as well as elastic deformations due to the mismatch of the lattice constants of the barrier and quantum well materials. With the help of the mathematical apparatus of crystallophysics, all the components of the polarization dependent on the crystal temperature are calculated. Numerical estimates showed that the most important mechanisms of polarization are the pyroelectric effect and piezoelectric effect caused by the thermal expansion of the crystal. It is proposed to compensate an internal polarization by application to the side faces of the heterostructure of an external deformation creating in the heterostructure the piezo-polarization of equal magnitude and opposite direction.

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Authors and Affiliations

  1. Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia

    V. N. Davydov

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  1. V. N. Davydov
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Correspondence to V. N. Davydov.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 31–38, December, 2014.

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Davydov, V.N. Polarization Properties of MQW InGaN/GaN Heterostructures Under Heating. Russ Phys J 57, 1648–1657 (2015). https://doi.org/10.1007/s11182-015-0433-9

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  • DOI: https://doi.org/10.1007/s11182-015-0433-9

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