A procedure for refinement of the boundary conditions in models for investigating electron states in heterostructures is suggested based on results of pseudopotential calculations. The suggested approach is used to calculate resonant electron tunneling in GaAs/AlAs(113) heterostructures.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. Y. Ko and J. S. Inkson, Phys. Rev., B38, 9945–9951 (1988).
S. N. Grinyaev and V. N. Chernyshov, Fiz. Tekh. Poluprovodn., 26, 2057–2067 (1992).
G. F. Karavaev, S. N. Grinyaev, and V. N. Chernyshov, Russ. Phys. J., 35, No. 9, 830–840 (1992).
G. F. Karavaev and V. N. Chernyshov, Fiz. Tekh. Poluprovodn., 35, 105–109 (2001).
G. F. Karavaev and V. N. Chernyshov, Fiz. Tekh. Poluprovodn., 35, 841–849 (2001).
V. A. Chaldyshev and S. N. Grinyaev, Russ. Phys. J., 26, No. 3, 243–263 (1983).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 20–25, December, 2014.
Rights and permissions
About this article
Cite this article
Chernyshov, V.N. Boundary Conditions in Models for Calculating Electron States in Semiconductor Nanostructures. Russ Phys J 57, 1634–1641 (2015). https://doi.org/10.1007/s11182-015-0431-y
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-015-0431-y