The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are presented. In these structures, an increase of the internal quantum efficiency is observed. The high-resolution X-ray diffraction spectra and the integrated PL intensity are measured for two temperatures – 10 and 300 K – at different levels of optical YAG-laser pumping.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 134–137, November, 2014.
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Romanov, I.S., Prudaev, I.A., Brudnyi, V.N. et al. Led InGaN/GaN Structures with Short-Period Superlattice Grown on Flat and Patterned Sapphire Substrates. Russ Phys J 57, 1604–1608 (2015). https://doi.org/10.1007/s11182-015-0424-x
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DOI: https://doi.org/10.1007/s11182-015-0424-x