Skip to main content
SpringerLink
Log in

Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate

  • Published:
Russian Physics Journal Aims and scope

Effect of a patterned sapphire substrate on the increase of external quantum efficiency in “blue” InGaN/GaN LED structures is studied. It is shown that in structures with high internal quantum efficiency (no less than 60%), an increase of the external quantum efficiency is due to an increase of the coefficient of the radiation output from the crystal. Epitaxial growth of GaN on a sapphire substrate with an array of elements of pyramidal shape with a base of 900 nm and a period of 1200 nm allows to increase by 75% the coefficient of the radiation output.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V. I. Gaman, Physics of Semiconductor Devices [in Russian], Publ. House of Sci. and Techn. Liter. Ltd., Tomsk (2000).

    Google Scholar 

  2. F. Shubert, Light-Emitting Diodes [Russian translation], Fizmalit, Moscow (2008).

    Google Scholar 

  3. V. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, et al., Pisma Zh. Tekh. Fiz., 34, 39 (2008).

    Google Scholar 

  4. H. W. Huang, C. H. Lin, J. K. Huang, et al., Mat. Sci. Eng. B, 164, 76 (2009).

    Article  Google Scholar 

  5. Park Hyoungwon, Byeon Kyeong-Jae, Jang Jong-Jin, et al., Microelectr. Eng., 88 3207 (2011).

    Article  Google Scholar 

  6. D. S. Wuu, W. K. Wang, K. S. Wen, et al., J. Appl. Phys. Lett., 89, 161105 (2006).

    Article  ADS  Google Scholar 

  7. Li Ya-Ju, Ching Hua-Chiu, Chih Chun Ke, et al., IEEE J. Select. Top. Quant. Electron., 15, 1137 (2009).

    Article  Google Scholar 

  8. T. Kohno, Y. Sudo, M. Yamauchi, et al., Jap. J. Appl. Phys., 51, 072102 (2012).

    Article  ADS  Google Scholar 

  9. Yu. S. Lelikov, N. I. Bochkareva, R. I. Gorbunov, et al., Fiz. Tekh. Poluprovodn., 12, Vyp. 11, 1371 (2008).

  10. S. Watanabe, N. Yamada, M. Nagashima, et al., Appl Phys. Lett., 83, No. 24, 4906 (2003).

    Article  ADS  Google Scholar 

  11. I. A. Prudaev, I. S. Romanov, V. V. Kop’ev, et al., Russ. Phys. J., 56, No. 7, 757 (2013).

    Article  Google Scholar 

  12. I. S. Romanov, I. A. Prudaev, A. A. Marmalyuk, et al., Russ. Phys. J., 56, No. 7, 760 (2013).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    I. A. Prudaev, I. S. Romanov & Vad. A. Novikov

  2. “SigmPlyus” Co. Ltd, Moscow, Russia

    А. А. Marmalyuk, V. A. Kureshov, D. R. Sabitov & А. V. Маzalov

Authors
  1. I. A. Prudaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. I. S. Romanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Vad. A. Novikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. А. А. Marmalyuk
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. V. A. Kureshov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. D. R. Sabitov
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. А. V. Маzalov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to I. A. Prudaev.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 85–88, May, 2014.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Prudaev, I.A., Romanov, I.S., Novikov, V.A. et al. Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate. Russ Phys J 57, 657–661 (2014). https://doi.org/10.1007/s11182-014-0288-5

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11182-014-0288-5

Keywords

Search

Navigation