Luminescence of Degraded Si–SiO₂ Structures

Possibilities of using electroluminescence (EL) and cathodoluminescence (CL) in the spectral range 250–800 nm to investigate physical-chemical processes taking place in Si–SiO₂ structures as a result of extreme external actions (strong electric fields or γ-radiation) are considered. It is found that degradation processes along with changes in the electrophysical characteristics of Si–SiO₂ structures are revealed in changes in the luminescence spectra, especially in the red region. The similarity of the changes in the CL and EL spectra of Si–SiO₂ structures exposed to field and radiation points to a similarity in the processes taking place during degradation, which is confirmed by the qualitative similarity of the changes in the charge characteristics. The near-invariance of the spectral composition of the luminescence is an indication that the processes taking place during degradation do not lead to the formation of new luminescence centers, but modify the concentration of already existing biographical defects. This is evidence of the existence of a direct link between resistance to degradation and the technology of formation of the oxide layer on the silicon surface.