Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Yu. B. Bolkhovityanov and O. P. Pchelyakov, Uspekhi Fiz. Nauk, 178, No. 5, 459–480 (2008).
N. Merabtine, S. Amourache, et al., Quant. Electron. Optoel., 7, No. 1, 108–111 (2004).
T. V. Blank and Yu. A.Goldberg, Fiz. Tekh. Poluprovodn., 37, issue 9, 1025–1055 (2003).
E. Radziemska, Progr. En. Comb. Sci., 29, Nо. 5, 407–424 (2003).
M. N. Van den Donker, Appl. Phys. Lett., 90, 183504/1–3 (2007).
R. Mostefaoui, S. Belarbi, and A. Benatiallah, Desalination, 209, No. 1–3, 10–14 (2007).
M. Fonrodona, D. Soler, F. Villar, et al., Thin Solid Films, 501, No. 1–2, 247– 251 (2006).
N. Souffi, G. H. Bauer, and R. Brüggemann, Ibid., 501, No. 1–2, 129–132 (2006).
A. Slaoui, E. Pihan, and A. Focsa, Sol. Energy Mater. Sol. Cells, 90, 1542–1552, (2006).
H. Kakiuchi, M. Matsumoto, Y. Ebata, et al., J. Non-Cryst. Sol., 351, 741–747 (2005).
H. Huiying, L. Xianbo, Z. Xiangbo, et al., J. Cryst. Growth, 281, No. 2–4, 344– 348 (2005).
D. I. Tetelbaum, O. N. Gorshkov, A. P. Kasatkin, et al., Fiz. Tverd. Tela, 47, issue 1, 17–21 (2005).
A. A. Ezhevskii, M. Yu. Lebedev, and S. V. Morozov, Ibid., 22–25.
Yu. N. Parkhomenko, N. N. Gerasimenko, A. V. Irzhak, Izv. Vyssh. Uchebn. Zaved., Mat. El. Tekh., No. 3, 25–29 (2005).
V. G. Baru, S. Beilis, V. A. Zhitov, et al., Mikroelektronika, 34, No. 5, 327– 333 (2005).
Y. Katsuhiro, N. Syuusako, and N. Kazuhiro, Eur. Phys. J. Appl. Phys. 27, 129– 132 (2004).
J. O. Orwa, J. M. Shannon, R. G. Gateru, et al., J. Appl. Phys. 97, Nо. 2, 023519/1–5 (2005).
R. I. Batalov and R. M. Bayazitov, Izv. Vyssh. Uchebn. Zaved., Mat. El. Tekh., No. 1, 28–34 (2006).
L. T. Canham, K. G. Barraclough, and D. J. Robbins, Appl. Phys. Lett., 51, 1509–1511 (1987).
G. E. Remnev, Yu. F. Ivanov, E. P. Naiden, et al., Zh. Tekh. Fiz., 79, issue 4, 156–158 (2009).
V. V. Uglov, G. E. Remnev, V. I. Shimanski, et al., in: Proc. 10th Int. Conf. Mod. Mat. Particles Beams and Plasma Flows, 19–24 Sept. 2010, 148–151 (2010).
A. G. Kazansky, Kh. Mell, E. I. Terukov, and P. A. Forsch, Fiz. Tekh. Poluprovodn., 34, 373–375 (2000).
O. A. Golikova and M. M. Kazanin, Ibid., 33, 336–339 (1999).
I. A. Kurova, N. N. Ormont, E. I. Terukov, et al., Ibid., 35, 367–370 (2001).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 3–7, June, 2013.
Rights and permissions
About this article
Cite this article
Kabyshev, A.V., Konusov, F.V. & Remnev, G.E. Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation. Russ Phys J 56, 607–611 (2013). https://doi.org/10.1007/s11182-013-0075-8
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-013-0075-8