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The effect of boron implantation modes on the parameters of photodiodes produced in the Cd x Hg1-x Te heteroepitaxial structures

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Russian Physics Journal Aims and scope

The results of measurements of dark current-voltage characteristics of planar diodes of various area produced on the basis of heteroepitaxial MBE p-CMT layers under various modes of boron ion implantation are discussed. It is shown that the diodes with the n+/n−/p-junction are characterized by far lower dark currents and higher differential resistance Rd as compared with abrupt n+-p-junctions. It was experimentally established that the parameter RdAeff, where Aeff is the effective area of minor charge-carrier collection, is more correct that the RdA parameter for the n-p-junctions of various areas.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii

  2. Federal State Unitary Enterprise “Research Production Association “Alpha”, Moscow, Russia

    M. S. Nikitin

  3. The Peter the Great Military Academy of Strategic Missile Forces, Moscow, Russia

    N. Kh. Talipov

Authors
  1. A. V. Voitsekhovskii
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  2. M. S. Nikitin
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  3. N. Kh. Talipov
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Correspondence to A. V. Voitsekhovskii.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 104-109, May, 2013.

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Voitsekhovskii, A.V., Nikitin, M.S. & Talipov, N.K. The effect of boron implantation modes on the parameters of photodiodes produced in the Cd x Hg1-x Te heteroepitaxial structures. Russ Phys J 56, 599–605 (2013). https://doi.org/10.1007/s11182-013-0074-9

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  • DOI: https://doi.org/10.1007/s11182-013-0074-9

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