References
K. Ernst, A. Belaidi, and R. Konenkamp, Semicond. Sci. Technol., 18, 475–478 (2003).
V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, et al., Semicond. Sci. Technol., 26, 125006 (2011).
V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, et al., Semiconductors, 45, 1077–1081 (2012).
V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, and P. D. Maryanchuk, Semicond. Sci. Technol., 27, 055008 (2012).
I. L. Sharma and R. K. Purokhit, Semiconductor Heterojunctions [in Russian], Sov. Radio, Moscow (1979).
Yu. A. Goldberg, O. V. Ivanova, T. V. L’vov, and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn., 17, 1472–1475 (1984).
A. S. Kovasoglu, N. Kovasoglu, and S. Oktik, Solid-State Electon., 52, 990–996 (2008).
V. V. Brus, Semicond. Sci. Technol., 27, 035024 (2012).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 108–109, February, 2013.
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Brus, V.V., Kovalyuk, Z.D. & Mar’yanchuk, P.D. Electrical properties of an n-TiO2/n-GaP semiconductor heterostructure. Russ Phys J 56, 233–235 (2013). https://doi.org/10.1007/s11182-013-0020-x
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DOI: https://doi.org/10.1007/s11182-013-0020-x