The effect of substrate material on the electrical characteristics of Ta x O y films produced by high-frequency magnetron sputtering of a tantalum oxide target is studied. The effect of oxygen plasma on leakage currents, dielectric permittivity, and dielectric dissipation factor of thin (300–400 nm) Ta x O y layers is found. It is proposed to process tantalum oxide films in oxygen plasma to control their electrical and dielectric properties.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
K. Okamoto, Y. Nasu, and Y. Hamakawa, IEEE Trans. Electron. Dev., ED-28, No. 6, 698–702 (1981).
C. W. Wang, J. Y. Liao, Y-K Su, and M. Yokokyama, Ibid., ED-45, No. 4, 757–762 (1998).
S. K. Tiku and G. S. Smith, Ibid., ED-31, No. 1, 105–108 (1984).
J. Heikenfeld and A. J. Steckl, Ibid., ED-49, No. 4, 557–563 (2002).
V. Ligatchev, E. Ruslie, L-B. Keng, et al., Nanotech., 2, 381–384 (2005).
C.-S. Chang, T.-P. Liu, and T.-B. Wu, J. Appl. Phys., 88, 7242–7248 (2000).
J. W. Lee, M. H. Ham, W.-J. Maeng, et al., Microelectr. Engin., 54, No. 12, 2865–2868 (2007).
H. Kozawaguchi, B. Tsujiyama, and K. Murase, Jpn. J. Appl. Phys., 21, 1028–1031 (1982).
S. Oshio, M. Yamamoto, J. Kuwata, and T. Matsuoka, J. Appl. Phys., 71, 3471–3478 (1991).
T. V. Petlitskaya, Dokl. BGUIR, 1, 70–74 (2003).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 83–88, December, 2010.
Rights and permissions
About this article
Cite this article
Kalygina, V.M., Zyryanov, A.T., Novikov, V.A. et al. The effect of substrate material on the properties of tantalum oxide films. Russ Phys J 53, 1312–1317 (2011). https://doi.org/10.1007/s11182-011-9566-7
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-011-9566-7