It is demonstrated that the resonant mechanism on inhomogeneities formed for a fixed distribution of dielectric permittivity can underlie the directed self-organization of the electron flow in semiconductors. The behavior of the resonant flow velocity amplitudes depending on the inhomogeneity factors is considered in the ballistic regime.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 52–55, October, 2010.
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Kuznetsov, V.A. Stationary resonance of electron flows in structures with modulated dielectric permittivity. Russ Phys J 53, 1041–1045 (2011). https://doi.org/10.1007/s11182-011-9528-0
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DOI: https://doi.org/10.1007/s11182-011-9528-0