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Model representation of the transmission of high-power pulsed laser IR radiation in the fundamental absorption region in Cd x Hg1–x Te epitaxial layers

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A model which describes the changes in the transmission of high-power laser pulses by Cd x Hg1–x Te in view of the variations of the optical parameters of the material with temperature is presented. The thermal fields, absorptance profiles, and transmittance of the semiconductor epitaxial structure have been calculated and compared with experimental data obtained for the wavelength of a carbon dioxide laser.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii

  2. The Peter Great Military Academy of Strategic Missile Force, Moscow, Russia

    S. A. Shulga, V. G. Sredin & N. Kh. Talipov

Authors
  1. A. V. Voitsekhovskii
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  2. S. A. Shulga
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  3. V. G. Sredin
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  4. N. Kh. Talipov
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Corresponding author

Correspondence to A. V. Voitsekhovskii.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 54–58, September, 2010.

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Voitsekhovskii, A.V., Shulga, S.A., Sredin, V.G. et al. Model representation of the transmission of high-power pulsed laser IR radiation in the fundamental absorption region in Cd x Hg1–x Te epitaxial layers. Russ Phys J 53, 936–942 (2011). https://doi.org/10.1007/s11182-011-9513-7

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  • DOI: https://doi.org/10.1007/s11182-011-9513-7

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