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Investigation of time characteristics of photodetectors based on Ge/Si nanoheterostructures

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Russian Physics Journal Aims and scope

Results of investigations into the time characteristics of photosensitive layers based on Ge/Si nanoheterostructures excited by femtosecond laser pulses with a wavelength of 1.55 μm are given. It is demonstrated that the leading front duration of the photoresponse pulse for the examined specimens excited by laser pulses of 120 fs duration does not exceed 30–40 пs.

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References

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Authors and Affiliations

  1. Tomsk State University, Tomsk, Russia

    V. A. Donchenko & A. A. Zemlyanov

  2. Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia

    A. I. Yakimov & V. V. Kirienko

Authors
  1. V. A. Donchenko
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  2. A. I. Yakimov
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  3. A. A. Zemlyanov
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  4. V. V. Kirienko
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Corresponding author

Correspondence to V. A. Donchenko.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 64‒67, May, 2010.

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Donchenko, V.A., Yakimov, A.I., Zemlyanov, A.A. et al. Investigation of time characteristics of photodetectors based on Ge/Si nanoheterostructures. Russ Phys J 53, 504–507 (2010). https://doi.org/10.1007/s11182-010-9449-3

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  • DOI: https://doi.org/10.1007/s11182-010-9449-3

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