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Intermodulation of transverse magnetoresistance oscillations in structures with strong intersubband interaction

  • Physics of Semiconductors and Dielectrics
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Russian Physics Journal Aims and scope

In the Shubnikov–de Haas oscillation spectrum of doped InAs/AlSb structures, high-amplitude peaks are established at combination frequencies. It is demonstrated that they are caused by a significant contribution of intersubband scattering to the processes of electron-electron interaction.

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Authors and Affiliations

  1. S. A. Esenin Ryazan’ State University, Ryazan’, Russia

    M. M. Afanasova & V. A. Stepanov

Authors
  1. M. M. Afanasova
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  2. V. A. Stepanov
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Corresponding author

Correspondence to M. M. Afanasova.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 32–38, December, 2008.

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Afanasova, M.M., Stepanov, V.A. Intermodulation of transverse magnetoresistance oscillations in structures with strong intersubband interaction. Russ Phys J 51, 1279–1286 (2008). https://doi.org/10.1007/s11182-009-9177-8

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  • DOI: https://doi.org/10.1007/s11182-009-9177-8

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