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The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides

  • Physics of Semiconductors and Dielectrics
  • Published:
Russian Physics Journal Aims and scope

The electronic band structure and position of the charge neutrality level (CNL) in BN, AlN, GaN, and InN compounds with cubic and hexagonal lattices are calculated within the density functional theory (DFT-GGA). It is shown that the charge neutrality level is shifted from the middle of the BN and AlN forbidden band to the upper half of the GaN forbidden band and to the allowed energy region in the InN conduction band as the cation atomic weight increases. This determines semiinsulating properties of BN and AlN, n-type conductivity of GaN, and n +-type conductivity of InN upon saturation of these materials by intrinsic lattice defects due to hard radiation.

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Authors and Affiliations

  1. Tomsk State University, Tomsk, Russia

    V. N. Brudnyi

  2. Kemerovo State University, Kemerovo, Russia

    A. V. Kosobutsky

  3. Obninsk Branch of Federal State Unitary Enterprise “L. Ya. Karpov Research Institute of Physical Chemistry”, Obninsk, Russia

    N. G. Kolin

Authors
  1. V. N. Brudnyi
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  2. A. V. Kosobutsky
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  3. N. G. Kolin
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 24–31, December, 2008.

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Brudnyi, V.N., Kosobutsky, A.V. & Kolin, N.G. The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides. Russ Phys J 51, 1270–1278 (2008). https://doi.org/10.1007/s11182-009-9176-9

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  • DOI: https://doi.org/10.1007/s11182-009-9176-9

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