The results of investigations into the electrophysical properties of heteroepitaxial semiconductor material CdHgTe (CMT) grown by molecular-beam epitaxy (MBE) after ion implantation are reported. The major factors responsible for the differences between ion implantation in bulk CMT crystals and heteroepitaxial MBE CMT are determined.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 5–18, October, 2008.
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Voitsekhovskii, A.V., Grigor’ev, D.V. & Talipov, N.K. Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy. Russ Phys J 51, 1001–1015 (2008). https://doi.org/10.1007/s11182-009-9142-6
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DOI: https://doi.org/10.1007/s11182-009-9142-6