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Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing

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Russian Physics Journal Aims and scope

Methods of reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) are used to investigate the special features of morphological changes on the GaAs(001) surface during the molecular-beam epitaxy (MBE) growth and vacuum annealing. A relationship is revealed between the superstructural state of the surface and the character of these changes. Thermodynamic conditions of epitaxial GaAs(001) growth with the most structurally perfect surface are established. The characteristics of the processes causing evolution of the relief during MBE growth in states with reconstruction (2 × 4) are determined. A new technique that allows the efficiency of smoothing of the GaAs(001) surface to be increased considerably by annealing in an arsenic flow is suggested and tested.

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Authors and Affiliations

  1. Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia

    A. V. Vasev, M. A. Putyato, B. R. Semyagin, V. A. Seleznev & V. V. Preobrazhenskii

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  1. A. V. Vasev
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  2. M. A. Putyato
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  3. B. R. Semyagin
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  4. V. A. Seleznev
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  5. V. V. Preobrazhenskii
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Correspondence to A. V. Vasev.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 5–13, September, 2008.

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Vasev, A.V., Putyato, M.A., Semyagin, B.R. et al. Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing. Russ Phys J 51, 887–896 (2008). https://doi.org/10.1007/s11182-009-9140-8

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  • DOI: https://doi.org/10.1007/s11182-009-9140-8

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