The results of investigations into spatial distribution of donors in p-HgCdTe graded band-gap layers with various composition profiles in the near-surface layer upon ion-beam etching are reported. It is found that the depth of the resulting n+-layer is weakly dependent on the conditions of ion-beam etching and composition of material of the surface and is about 0.5–1 µm. The electron density in the n+-layer on the surface is observed to increase with time of beam etching. It is shown that the conditions of ion-beam etching and the composition of the near-surface region significantly affect only the depth of the foregoing layer with low electron density. Analysis of experimental data shows that the process of ion-bean etching in p-HgCdTe heteroepitaxial structures with a composition gradient in the near-surface region is different from etching in HgCdTe homogeneous epitaxial structures and crystals.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 51–56, September, 2008.
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Voitsekhovskii, A.V., Volkov, V.S., Grigor’ev, D.V. et al. Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching. Russ Phys J 51, 936–942 (2008). https://doi.org/10.1007/s11182-009-9134-6
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DOI: https://doi.org/10.1007/s11182-009-9134-6